Soft recovery rectifier MICROCHIP APT75DQ120BG diode suitable for snubber clamp and freewheeling diode roles
Key Attributes
Model Number:
APT75DQ120BG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
540A
Reverse Leakage Current (Ir):
100uA@1200V
Reverse Recovery Time (trr):
32ns
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
2.8V@75A
Current - Rectified:
75A
Mfr. Part #:
APT75DQ120BG
Package:
TO-247
Product Description
Product Overview
The APT75DQ120BG is an ultrafast soft recovery rectifier diode designed for high-frequency applications. It offers low forward voltage, low leakage current, and avalanche energy rating, making it suitable for power factor correction, switch-mode power supplies, inverters/converters, motor controllers, and as a freewheeling or snubber/clamp diode. Its benefits include high switching frequency, low switching losses, reduced EMI, and increased system reliability and power density.
Product Attributes
- Brand: Microsemi
- Certifications: RoHS compliant, AEC-Q101 qualified
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Test Conditions |
|---|---|---|---|---|
| Maximum DC reverse voltage | VR | 1200 | V | |
| Maximum peak repetitive reverse voltage | VRRM | 1200 | V | |
| Maximum working peak reverse voltage | VRWM | 1200 | V | |
| Maximum average forward current | IF(AV) | 75 | A | TC = 112 C, duty cycle = 0.5 |
| RMS forward current | IF(RMS) | 121 | A | |
| Non-repetitive forward surge current | IFSM | 540 | A | TJ = 45 C, 8.3 ms |
| Avalanche energy | EAVL | 20 | mJ | 1 A, 40 mH |
| Operating and storage temperature range | TJ, TSTG | 55 to 175 | C | |
| Lead temperature for 10 seconds | TL | 300 | C | |
| Junction-to-case thermal resistance | RJC | 0.31 | C/W | |
| Package weight | Wt | 6.2 | g | |
| Maximum mounting torque | 1.1 | N-m | ||
| Forward voltage | VF | 2.8 - 3.3 | V | IF = 75 A |
| Forward voltage | VF | 3.5 | V | IF = 150 A |
| Forward voltage | VF | 2.2 | V | IF = 75 A, TJ = 125 C |
| Maximum reverse leakage current | IRM | 100 | A | VR = 1200 V |
| Maximum reverse leakage current | IRM | 500 | A | VR = 1200 V, TJ = 125 C |
| Junction capacitance | CJ | 50 | pF | VR = 200 V |
| Reverse recovery time | trr | 32 | ns | IF = 1 A, di/dt = 100 A/s, VR = 30 V, TJ = 25 C |
| Reverse recovery time | trr | 325 | ns | IF = 75 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C |
| Reverse recovery charge | Qrr | 715 | nC | IF = 75 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C |
| Maximum reverse recovery current | IRRM | 5 | A | IF = 75 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C |
| Reverse recovery time | trr | 420 | ns | IF = 75 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C |
| Reverse recovery charge | Qrr | 3340 | nC | IF = 75 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C |
| Maximum reverse recovery current | IRRM | 13 | A | IF = 75 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C |
| Reverse recovery time | trr | 195 | ns | IF = 75 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C |
| Reverse recovery charge | Qrr | 5810 | nC | IF = 75 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C |
| Maximum reverse recovery current | IRRM | 42 | A | IF = 75 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C |
2504101957_MICROCHIP-APT75DQ120BG_C17554511.pdf
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