n channel enhancement mode mosfet miracle power ms0007y suitable for high frequency power conversion
Key Attributes
Model Number:
MS0007Y
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
83A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
2.58nF
Output Capacitance(Coss):
806pF
Gate Charge(Qg):
44nC@10V
Mfr. Part #:
MS0007Y
Package:
PDFN-8(5x6)
Product Description
Product Overview
The MS0007Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This reliable and rugged component features fast switching speeds and is available as a green device, with 100% EAS guaranteed. It is ideally suited for high-frequency switching, synchronous rectification, and DC/DC converter applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: N-Channel Enhancement Mode MOSFET
- Green Device Available: Yes
- EAS Guaranteed: 100%
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | - | - | 100 | V |
| VGS | Gate-Source Voltage | Tc = 25C unless otherwise noted | - | - | 20 | V |
| ID | Drain Current-Continuous, Tc =25C | Tc = 25C unless otherwise noted | - | - | 83 | A |
| ID | Drain Current-Continuous, Tc =100C | Tc = 25C unless otherwise noted | - | - | 52 | A |
| IDM | Drain Current-Pulsed | a | - | - | 320 | A |
| EAS | Avalanche Energy, Single pulse | b | - | - | 196 | mJ |
| IAS | Avalanche Current | b | - | - | 28 | A |
| PD | Maximum Power Dissipation @ Tc =25C | Tc = 25C unless otherwise noted | - | - | 83 | W |
| TSTG | Store Temperature Range | Tc = 25C unless otherwise noted | -55 | - | 150 | C |
| TJ | Operating Junction Temperature Range | Tc = 25C unless otherwise noted | -55 | - | 150 | C |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance Junction-Case | Maxc | - | 1.5 | 1.7 | C/W |
| RJA | Thermal Resistance Junction-Ambient | Maxc | - | 45 | 50 | C/W |
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 100V, VGS = 0V | - | - | 1 A | - |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 nA | - |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 1.2 | 1.7 | 2.5 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 20A | - | 5.6 | 6.5 | m |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 4.5V, ID = 15A | - | 7.0 | 8.8 | m |
| Dynamic Characteristics | ||||||
| Rg | Gate Resistance | f = 1.0MHz | - | 1.8 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, Freq.= 1.0MHz | - | 2580 | - | pF |
| Coss | Output Capacitance | VDS = 50V, VGS = 0V, Freq.= 1.0MHz | - | 806 | - | pF |
| Crss | Reverse Transfer Capacitance | VDS = 50V, VGS = 0V, Freq.= 1.0MHz | - | 22 | - | pF |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 50V, ID =20A, RGEN = 6.2,VGS=10V | - | 11 | - | ns |
| tr | Turn-On Rise Time | VDS = 50V, ID =20A, RGEN = 6.2,VGS=10V | - | 18 | - | ns |
| td(off) | Turn-Off Delay Time | VDS = 50V, ID =20A, RGEN = 6.2,VGS=10V | - | 50 | - | ns |
| tf | Turn-Off Fall Time | VDS = 50V, ID =20A, RGEN = 6.2,VGS=10V | - | 40 | - | ns |
| Qg | Total Gate Charge | VDS = 50V, ID = 20A, VGS = 10V | - | 44 | - | nC |
| Qgs | Gate-Source Charge | VDS = 50V, ID = 20A, VGS = 10V | - | 9 | - | nC |
| Qgd | Gate-Drain Charge | VDS = 50V, ID = 20A, VGS = 10V | - | 9 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| IS | Maximum Continuous Body Diode Forward Current | VGS = 0V | - | - | 83 | A |
| ISM | Maximum Pulsed Body Diode Forward Current | VGS = 0V | - | - | 320 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, ISD = 20A | - | - | 1.2 | V |
| trr | Reverse Recovery Time | IF= 20A, di/dt=100A/us | - | 49 | - | ns |
| Qrr | Reverse Recovery Charge | IF= 20A, di/dt=100A/us | - | 67 | - | nC |
Notes:
a: Max. current is limited by junction temperature.
b: The EAS data shows Max. Rating. The test condition is VDD=50V,VGS=10V,L=0.5mH,IAS=28A.
c: Surface Mounted on 1in2 FR-4 board with 1oz.
d: Pulse test (pulse width300us, duty cycle2%).
e: Guaranteed by design, not subject to production testing.
2504151445_MIRACLE-POWER-MS0007Y_C47361205.pdf
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