High Current N Channel MOSFET Megain MGP066N10N 100V 85A with Low On Resistance and Fast Switching
Key Attributes
Model Number:
MGP066N10N
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
85A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
3.148nF@50V
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
MGP066N10N
Package:
TO-220
Product Description
Product Overview
The MGP066N10N is an N-channel MOSFET featuring Advanced Trench MOS Technology. It offers a 100V drain-source voltage, a continuous drain current of 85A, and a low on-state resistance of less than 8.8m (typically 6.6m at VGS=10V). This device boasts 100% EAS guaranteed, fast switching speed, and is available as a green device. It is suitable for applications such as DC/DC converters and high-frequency switching with synchronous rectification.
Product Attributes
- Brand: Megain
- Model: MGP066N10N
- Package: TO220
- Form: Tube
- Quantity: 50 / Tube
- Marking: MGP066N10N
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | - | - | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=13.5A | - | 6.6 | 8.8 | m |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 2 | - | 4 | V |
| Drain-Source Leakage Current | IDSS | VDS=80V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Forward Transconductance | gfs | VDS=5V, ID=20A | - | 80 | - | S |
| Total Gate Charge | Qg | VDS=50V, VGS=10V, ID=13.5A | - | 45 | - | nC |
| Input Capacitance | Ciss | VDS=50V, VGS=0V, F=1MHz | - | 3148 | - | pF |
| Output Capacitance | Coss | VDS=50V, VGS=0V, F=1MHz | - | 693 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V, VGS=0V, F=1MHz | - | 26 | - | pF |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A | - | - | 1.1 | V |
| Reverse Recovery Time | trr | IF=13.5A, dlF/dt=100A/us | - | 33 | - | nS |
| Reverse Recovery Charge | Qrr | IF=13.5A, dlF/dt=100A/us | - | 150 | - | nC |
| Drain-Source Voltage | VDS | - | - | - | 100 | V |
| Gate-Source Voltage | VGS | - | - | - | 20 | V |
| Drain Current Continuous | ID | TC=25 | - | - | 85 | A |
| Drain Current Continuous | ID | TC=100 | - | - | 62 | A |
| Pulsed Drain Current | IDM | - | - | - | 330 | A |
| Single Pulse Avalanche Energy | EAS | - | - | - | 39.2 | mJ |
| Avalanche Current | IAS | - | - | - | 28 | A |
| Total Power Dissipation | PD | TC=25C | - | - | 125 | W |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 175 | |
| Thermal Resistance Junction-Ambient | RJA | - | - | - | 22 | /W |
| Thermal Resistance Junction-Ambient | RJA | - | - | - | 50 | /W |
| Thermal Resistance Junction to Case | RJC | - | - | - | 1.2 | /W |
2411220027_Megain-MGP066N10N_C41380434.pdf
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