Low Resistance N Channel MOSFET Megain MGC038N10N for Motor Driver and Battery Management Systems
Key Attributes
Model Number:
MGC038N10N
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
100A
RDS(on):
4.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Pd - Power Dissipation:
208W
Input Capacitance(Ciss):
4.725nF@50V
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
MGC038N10N
Package:
PDFN5x6-8
Product Description
Product Overview
The MGC038N10N is an N-Channel MOSFET featuring Advanced Trench MOS Technology, offering super low RDS(ON) and 100% EAS guaranteed. This device is designed for high-frequency switching applications and is available as a Green Device. Its key applications include motor drivers and Battery Management Systems (BMS).
Product Attributes
- Brand: Megain
- Part Number: MGC038N10N
- Package: PDFN 5x6
- Form: Tape & Reel
- Quantity: 5000 PCS/Tape & Reel
- Marking: MGC038N10N
- Availability: Green Device Available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-Source Voltage | VDS | VGS=0V, ID=250uA | 100 | - | - | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=30A | - | 3.7 | 4.5 | m |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 2 | 3 | 4 | V |
| Drain-Source Leakage Current | IDSS | VDS=100V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | ±100 | nA |
| Forward Transconductance | gfs | VDS=5V, ID=30A | - | 50 | - | S |
| Gate Resistance | Rg | VDS=0V , VGS=0V , f=1MHz | - | 1 | - | |
| Total Gate Charge | Qg | VDS=50V, VGS=10V, ID=20A | - | 72 | - | nC |
| Input Capacitance | Ciss | VDS=50V, VGS=0V, F=1MHz | - | 4725 | - | pF |
| Output Capacitance | Coss | VDS=50V, VGS=0V, F=1MHz | - | 609 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V, VGS=0V, F=1MHz | - | 14 | - | pF |
| Continuous Source Current | IS | VG=VD=0V,Force Current | - | - | 100 | A |
| Diode Forward Voltage | VSD | VGS=0V, IS=50A | - | - | 1.3 | V |
| Reverse Recovery Time | trr | IF=30A, dlF/dt=100A/us | - | 70 | - | nS |
| Reverse Recovery Charge | Qrr | IF=30A, dlF/dt=100A/us | - | 170 | - | nC |
| Thermal Resistance Junction to Ambient | RJA | 1 | - | - | 62 | /W |
| Thermal Resistance Junction to Case | RJC | 1 | - | - | 0.6 | /W |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | - | - | V |
| Drain Current – Continuous | ID | TC=25 | - | - | 100 | A |
| Drain Current – Continuous | ID | TC=100 | - | - | 95 | A |
| Pulsed Drain Current | IDM | 2 | - | - | 480 | A |
| Single Pulse Avalanche Energy | EAS | 3 | - | - | 702 | mJ |
| Avalanche Current | IAS | 3 | - | - | 53 | A |
| Total Power Dissipation | PD | TC=25°C | - | - | 208 | W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 |
2410121546_Megain-MGC038N10N_C22396270.pdf
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