N Channel and P Channel Enhancement Mode MOSFET MIRACLE POWER MD4002S for Load Switching Applications
Key Attributes
Model Number:
MD4002S
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
7A
RDS(on):
38mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF@20V;28pF@20V
Number:
1 N-Channel + 1 P-Channel
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
516pF@20V;500pF@20V
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
MD4002S
Package:
SOP-8
Product Description
Product Overview
The MD4002S is an N- and P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for load switching, PWM applications, and power management. This device provides robust performance with specific ratings for both N-channel and P-channel operation.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Trench Technology
- Channel Type: N-Channel and P-Channel Enhancement Mode
Technical Specifications
| Model | Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| MD4002S | Features | |||||
| N-MOS 40V, 7A RDS(ON) | VGS = 10V | - | 28 | - | m | |
| N-MOS 40V, 7A RDS(ON) | VGS = 4.5V | - | 36 | - | m | |
| P-MOS -40V, -6A RDS(ON) | VGS = -10V | - | 58 | - | m | |
| P-MOS -40V, -6A RDS(ON) | VGS = -4.5V | - | 70 | - | m | |
| Absolute Maximum Ratings (TA = 25C unless otherwise noted) | ||||||
| MD4002S | Drain-Source Voltage (VDS) | N-MOS | 40 | - | - | V |
| Drain-Source Voltage (VDS) | P-MOS | -40 | - | - | V | |
| Gate-Source Voltage (VGS) | N/P-MOS | -20 | - | 20 | V | |
| Drain Current-Continuous (ID) @ TC =25C | N-MOS | - | 7 | - | A | |
| Drain Current-Continuous (ID) @ TC =25C | P-MOS | - | -6 | - | A | |
| Drain Current-Pulsed (IDM) | N-MOS | - | 28 | - | A | |
| Drain Current-Pulsed (IDM) | P-MOS | - | -24 | - | A | |
| Avalanche Energy, Single pulse (EAS) | N-MOS | - | 19 | - | mJ | |
| Avalanche Energy, Single pulse (EAS) | P-MOS | - | 20 | - | mJ | |
| Total Power Dissipation (PD) @ TC =25C | N/P-MOS | - | 3 | - | W | |
| Junction and Storage Temperature Range (TJ, TSTG) | - | -55 | - | 150 | C | |
| Thermal Characteristics (TA = 25C unless otherwise noted) | ||||||
| MD4002S | Thermal Resistance Junction-Ambient (RJA) | N-MOS | - | 42 | - | C/W |
| Thermal Resistance Junction-Ambient (RJA) | P-MOS | - | 45 | - | C/W | |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| MD4002S | Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A (N-MOS) | 40 | - | - | V |
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = -250A (P-MOS) | -40 | - | - | V | |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 40V, VGS = 0V (N-MOS) | - | - | 1 | A | |
| Zero Gate Voltage Drain Current (IDSS) | VDS = -40V, VGS = 0V (P-MOS) | - | - | 1 | A | |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 20V (N/P-MOS) | - | - | 100 | nA | |
| MD4002S | Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250A (N-MOS) | 1.0 | 2.0 | 2.5 | V |
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = -250A (P-MOS) | 1.0 | 1.6 | 2.5 | V | |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 5A (N-MOS) | - | 28 | 38 | m | |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = -5A (P-MOS) | - | 58 | 75 | m | |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 4.5V, ID = 3A (N-MOS) | - | 36 | 50 | m | |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 4.5V, ID = -3A (P-MOS) | - | 70 | 100 | m | |
| MD4002S | Gate Resistance (Rg) | VGS = 0V, VDS = 0V, f = 1.0MHz (N-MOS) | - | 2.1 | - | |
| Gate Resistance (Rg) | VGS = 0V, VDS = 0V, f = 1.0MHz (P-MOS) | - | 13.5 | - | ||
| Input Capacitance (Ciss) | VDS = 20V, VGS = 0V, f = 1.0MHz (N-MOS) | - | 516 | - | pF | |
| Input Capacitance (Ciss) | VDS = -10V, VGS = 0V, f = 1.0MHz (P-MOS) | - | 500 | - | pF | |
| Output Capacitance (Coss) | N-MOS | - | 50 | - | pF | |
| Output Capacitance (Coss) | P-MOS | - | 53 | - | pF | |
| Reverse Transfer Capacitance (Crss) | N-MOS | - | 40 | - | pF | |
| Reverse Transfer Capacitance (Crss) | P-MOS | - | 28 | - | pF | |
| MD4002S | Turn-On Delay Time (td(on)) | VDD = 30V, ID = 2A, RG = 1, VGS = 10V (N-MOS) | - | 4 | - | ns |
| Turn-On Delay Time (td(on)) | VDD = -20V, ID = -3A, RG = -1, VGS = -10V (P-MOS) | - | 9 | - | ns | |
| Turn-On Rise Time (tr) | N-MOS | - | 21 | - | ns | |
| Turn-On Rise Time (tr) | P-MOS | - | 8 | - | ns | |
| Turn-Off Delay Time (td(off)) | N-MOS | - | 12 | - | ns | |
| Turn-Off Delay Time (td(off)) | P-MOS | - | 28 | - | ns | |
| Turn-Off Fall Time (tf) | N-MOS | - | 20 | - | ns | |
| Turn-Off Fall Time (tf) | P-MOS | - | 10 | - | ns | |
| Total Gate Charge (Qg) | VDS = 20V, ID = 3A, VGS = 10V (N-MOS) | - | 9.8 | - | nC | |
| Total Gate Charge (Qg) | VDS = -20V, ID = -3A, VGS = -10V (P-MOS) | - | 14 | - | nC | |
| Gate-Source Charge (Qgs) | N-MOS | - | 1.9 | - | nC | |
| Gate-Source Charge (Qgs) | P-MOS | - | 2.9 | - | nC | |
| Gate-Drain Charge (Qgd) | N-MOS | - | 2.1 | - | nC | |
| Gate-Drain Charge (Qgd) | P-MOS | - | 3.8 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| MD4002S | Continuous Source Current (IS) | N-MOS | - | - | 7 | A |
| Continuous Source Current (IS) | P-MOS | - | - | -6 | A | |
| Pulse Source Current (ISM) | N-MOS | - | - | 28 | A | |
| Pulse Source Current (ISM) | P-MOS | - | - | -24 | A | |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, ISD = 5A (N-MOS) | - | - | 1.2 | V | |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, ISD = -5A (P-MOS) | - | - | -1.2 | V | |
Applications: Load Switch, PWM Application, Power Management
2408011701_MIRACLE-POWER-MD4002S_C34373747.pdf
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