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quality Low Gate Charge and Fast Switching Power MOSFET MIRACLE POWER MPC07N80 with 100 Percent Avalanche Test factory
quality Low Gate Charge and Fast Switching Power MOSFET MIRACLE POWER MPC07N80 with 100 Percent Avalanche Test factory

Low Gate Charge and Fast Switching Power MOSFET MIRACLE POWER MPC07N80 with 100 Percent Avalanche Test

Key Attributes
Model Number: MPC07N80
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
7A
RDS(on):
1.8Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
11.2pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.443nF
Pd - Power Dissipation:
133W
Gate Charge(Qg):
33.9nC@10V
Mfr. Part #:
MPC07N80
Package:
TO-220
Product Description

Product Overview

The MPC07N80 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This component offers high performance with specifications including 800V, 7A, and a typical RDS(ON) of 1.4 at VGS = 10V. It features low gate charge, fast switching, and is 100% tested for single pulse avalanche energy. Its low reverse transfer capacitances make it suitable for applications such as adapters, LCD panel power, E-bike chargers, and switching mode power supplies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Model: MPC07N80
  • Type: N-Channel Power MOSFET
  • Technology: Miracle Technology

Technical Specifications

Symbol Parameter Test Condition Limit Unit
Features
800V, 7A, RDS(ON)(Typ.) = 1.4@VGS = 10V
Low Gate Charge
Fast Switching
100% Single Pulse avalanche energy Test
Low Reverse transfer capacitances
Application
Adapter
LCD Panel Power
E-Bike Charger
Switching Mode Power Supply
Absolute Maximum Ratings (Tc = 25C unless otherwise noted)
VDS Drain-Source Voltage 800 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous, TC =25C 7 A
ID Drain Current-Continuous, TC =100C 4.2 A
IDM Drain Current-Pulsed 28 A
PD Maximum Power Dissipation @ TJ =25C 133 W
EAS Single Pulsed Avalanche Energy 500 mJ
TJ, TSTG Operating and Store Temperature Range -55 to 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction-Case Max. 0.94 C/W
RJA Thermal Resistance Junction-Ambient Max. 62.5 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 800 V
IDSS Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 2 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID =3.5A 1.4 - 1.8
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz 1443 pF
Coss Output Capacitance 118 pF
Crss Reverse Transfer Capacitance 11.2 pF
On Characteristics (Switching)
td(on) Turn-On Delay Time VDD = 400V, ID =7A, RG = 10 20.5 ns
tr Turn-On Rise Time 17 ns
td(off) Turn-Off Delay Time 49.4 ns
tf Turn-Off Fall Time 21 ns
Qg Total Gate Charge VDS = 640V, ID =7A, VGS = 10V 33.9 nC
Qgs Gate-Source Charge 6.7 nC
Qgd Gate-Drain Charge 16.2 nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V 7 A
ISM Maximum Pulsed Current VGS = 0V 28 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A 1.5 V
trr Reverse Recovery Time IS=7A,Tj = 25 dIF/dt=100A/us, VGS=0V 626 ns
Qrr Reverse Recovery Charge 4.9 uC

2408011701_MIRACLE-POWER-MPC07N80_C34373723.pdf

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