MDD Microdiode Semiconductor BC81740 NPN Transistor Offering Low Saturation Voltage in Compact SOT23
Key Attributes
Model Number:
BC817-40
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC817-40
Package:
SOT-23
Product Description
BC817 SOT-23 Plastic-Encapsulate Transistor
The BC817 is an NPN transistor designed for general AF applications. It offers high collector current, high current gain, and low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP). Available in BC817-16, BC817-25, and BC817-40 variants, it is housed in a SOT-23 package.
Product Attributes
- Brand: microdiode
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test conditions | MIN | MAX | UNIT |
| MAXIMUM RATINGS | |||||
| Collector Base Voltage | VCBO | 50 | V | ||
| Collector Emitter Voltage | VCEO | 45 | V | ||
| Emitter Base Voltage | VEBO | 5 | V | ||
| Collector Current | IC | 0.5 | A | ||
| Power Dissipation | Ptot | (Ta=25 unless otherwise noted) | 300 | mW | |
| Junction Temperature | Tj | 150 | OC | ||
| Storage Temperature Range | Tstg | -55 | +150 | OC | |
| ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) | |||||
| Collector-base breakdown voltage | VCBO | IC= 10A, IE=0 | 50 | V | |
| Collector-emitter breakdown voltage | VCEO | IC= 10mA, IB=0 | 45 | V | |
| Emitter-base breakdown voltage | VEBO | IE= 1A, IC=0 | 5 | V | |
| Collector cut-off current | ICBO | VCB= 45 V , IE=0 | 0.1 | A | |
| Emitter cut-off current | IEBO | VEB=4V, IC=0 | 0.1 | A | |
| DC current gain | hFE | VCE=1V, IC=100mA | 100 | 600 | |
| VCE=1V, IC=500mA | 40 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC= 500mA, IB= 50mA | 0.7 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC= 500mA, IB= 50mA | 1.2 | V | |
| Base-emitter voltage | VBE | VCE= 1 V, IC= 500mA | 1.2 | V | |
| Collecter capacitance | Cob | VCB=10V ,f=1MHz | 10 | pF | |
| Transition frequency | fT | VCE= 5 V, IC= 10mA f=100MHz | 100 | MHz | |
| CLASSIFICATION OF hFE (1) | |||||
| Rank | BC817-16 | Range | 100-250 | ||
| BC817-25 | Range | 160-400 | |||
| BC817-40 | Range | 250-600 | |||
| Thermal Resistance | |||||
| From Junction To Ambient | R JA | 417 | OC/W | ||
2509111015_MDD-Microdiode-Semiconductor-BC817-40_C2992934.pdf
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