N channel depletion mode DMOS FET MICROCHIP LND150K1 G featuring integral source drain diode and drive
Key Attributes
Model Number:
LND150K1-G
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13mA
Operating Temperature -:
-
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1pF
Number:
1 N-channel
Output Capacitance(Coss):
3.5pF
Input Capacitance(Ciss):
10pF
Pd - Power Dissipation:
360mW
Gate Charge(Qg):
-
Mfr. Part #:
LND150K1-G
Package:
SOT-23
Product Description
Supertex LND150 N-Channel Depletion-Mode DMOS FET
The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertexs lateral DMOS technology. It features ESD protection on the gate and is ideal for high voltage applications such as normally-on switches, precision constant current sources, voltage ramp generation, and amplification. Key advantages include freedom from secondary breakdown, low power drive requirement, ease of paralleling, excellent thermal stability, an integral source-drain diode, high input impedance, low CISS, and ESD gate protection.
Product Attributes
- Brand: Supertex inc.
- Website: www.supertex.com
- Certifications: Lead (Pb)-free / RoHS compliant package (-G denotes this)
Technical Specifications
| Part Number | Package Options | Packing | BVDSX/BVDGX (V) | RDS(ON) (max) | IDSS (min) |
|---|---|---|---|---|---|
| LND150K1-G | TO-236AB (SOT-23) | 3000/Reel | 500 | 1.0k | 1.0mA |
| LND150N3-G | TO-92 | 1000/Bag | 500 | 1.0k | 1.0mA |
| LND150N3-G P002 | TO-92 | 2000/Reel | 500 | 1.0k | 1.0mA |
| LND150N3-G P003 | TO-92 | 2000/Reel | 500 | 1.0k | 1.0mA |
| LND150N3-G P005 | TO-92 | 2000/Reel | 500 | 1.0k | 1.0mA |
| LND150N3-G P013 | TO-92 | 2000/Reel | 500 | 1.0k | 1.0mA |
| LND150N3-G P014 | TO-92 | 2000/Reel | 500 | 1.0k | 1.0mA |
| LND150N8-G | TO-243AA (SOT-89) | 2000/Reel | 500 | 1.0k | 1.0mA |
| Parameter | Min | Typ | Max | Units | Conditions |
|---|---|---|---|---|---|
| BVDSX (Drain-to-source breakdown voltage) | 500 | - | - | V | VGS = -10V, ID = 1.0mA |
| VGS(OFF) (Gate-to-source off voltage) | -1.0 | - | -3.0 | V | VGS = 25V, ID = 100nA |
| VGS(OFF) (Change in VGS(OFF) with temperature) | - | - | 5.0 | mV/OC | VGS = 25V, ID = 100nA |
| IGSS (Gate body leakage current) | - | - | 100 | nA | VGS = 20V, VDS = 0V |
| ID(OFF) (Drain-to-source leakage current) | - | - | 100 | nA | VGS = -10V, VDS = 450V |
| ID(OFF) (Drain-to-source leakage current) | - | - | 100 | A | VDS = 0.8V Max Rating, VGS = -10V, TA = 125OC |
| IDSS (Saturated drain-to-source current) | 1.0 | - | 3.0 | mA | VGS = 0V, VDS = 25V |
| RDS(ON) (Static drain-to-source on-state resistance) | - | 850 | 1000 | VGS = 0V, ID = 0.5mA | |
| RDS(ON) (Change in RDS(ON) with temperature) | - | - | 1.2 | %/OC | VGS = 0V, ID = 0.5mA |
| GFS (Forward transductance) | 1.0 | 2.0 | - | mS | VDS = 0V, ID = 1.0mA |
| CISS (Input capacitance) | - | 7.5 | 10 | pF | VGS = -10V, VDS = 25V, f = 1.0MHz |
| COSS (Common source output capacitance) | - | 2.0 | 3.5 | pF | VGS = -10V, VDS = 25V, f = 1.0MHz |
| CRSS (Reverse transfer capacitance) | - | 0.5 | 1.0 | pF | VGS = -10V, VDS = 25V, f = 1.0MHz |
| td(ON) (Turn-on delay time) | - | 0.09 | - | s | VDD = 25V, ID = 1.0mA, RGEN = 25 |
| tr (Rise time) | - | 0.45 | - | s | VDD = 25V, ID = 1.0mA, RGEN = 25 |
| td(OFF) (Turn-off delay time) | - | 0.1 | - | s | VDD = 25V, ID = 1.0mA, RGEN = 25 |
| tf (Fall time) | - | 1.3 | - | s | VDD = 25V, ID = 1.0mA, RGEN = 25 |
| VSD (Diode forward voltage drop) | - | - | 0.9 | V | VGS = -10V, ISD = 1.0mA |
| trr (Reverse recovery time) | - | 200 | - | ns | VGS = -10V, ISD = 1.0mA |
2410121636_MICROCHIP-LND150K1-G_C145393.pdf
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