Soft Recovery Rectifier Diode MICROCHIP APT60D60BG Ideal for Inverters and Motor Controller Circuits
Key Attributes
Model Number:
APT60D60BG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600A
Reverse Leakage Current (Ir):
250uA@600V
Reverse Recovery Time (trr):
130ns
Voltage - DC Reverse (Vr) (Max):
600V
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - Forward(Vf@If):
1.8V@60A
Current - Rectified:
60A
Mfr. Part #:
APT60D60BG
Package:
TO-247-2
Product Description
Product Overview
The APT60D60BG is an Ultrafast Soft Recovery Rectifier Diode designed for applications requiring low switching losses, reduced noise (EMI), and cooler operation. Its key features include ultrafast recovery times, soft recovery characteristics, low forward voltage, and low leakage current, making it suitable for power factor correction (PFC), anti-parallel diode applications, switchmode power supplies, inverters, freewheeling diodes, motor controllers, and snubber diodes. This RoHS-compliant device enhances system reliability and increases power density.
Product Attributes
- Brand: Microsemi
- Certifications: RoHS compliant
Technical Specifications
| Symbol | Parameter | Ratings | Unit | Test Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | |||||||
| VR | Maximum DC reverse voltage | 600 | V | ||||
| VRRM | Maximum peak repetitive reverse voltage | 600 | V | ||||
| VRWM | Maximum working peak reverse voltage | 600 | V | ||||
| IF(AV) | Maximum average forward current | 60 | A | TC = 125 C, duty cycle = 0.5 | |||
| IF(RMS) | RMS forward current | 132 | A | ||||
| IFSM | Non-repetitive forward surge current | 600 | A | TJ = 45 C, 8.3 ms | |||
| TJ, TSTG | Operating and storage temperature range | C | 55 | 175 | |||
| TL | Lead temperature for 10 seconds | 300 | C | ||||
| Electrical Performance - Static Characteristics | |||||||
| VF | Forward voltage | V | IF = 60 A | 1.6 | 1.8 | ||
| V | IF = 120 A | 1.9 | |||||
| V | IF = 60 A, TJ = 125 C | 1.4 | |||||
| IRM | Maximum reverse leakage current | A | VR = 600 V | 250 | |||
| A | VR = 600 V, TJ = 125 C | 500 | |||||
| CJ | Junction capacitance | pF | VR = 200 V | 90 | |||
| Electrical Performance - Dynamic Characteristics | |||||||
| trr | Reverse recovery time | ns | IF = 1 A, di/dt = 100 A/s, VR = 30 V, TJ = 25 C | 40 | |||
| trr | Reverse recovery time | ns | IF = 60 A, di/dt = 200 A/s, VR = 400 V, TJ = 25 C | 130 | |||
| Qrr | Reverse recovery charge | nC | IF = 60 A, di/dt = 200 A/s, VR = 400 V, TJ = 25 C | 220 | |||
| IRRM | Maximum reverse recovery current | A | IF = 60 A, di/dt = 200 A/s, VR = 400 V, TJ = 25 C | 4 | |||
| trr | Reverse recovery time | ns | IF = 60 A, di/dt = 200 A/s, VR = 400 V, TJ = 125 C | 170 | |||
| Qrr | Reverse recovery charge | nC | IF = 60 A, di/dt = 200 A/s, VR = 400 V, TJ = 125 C | 920 | |||
| IRRM | Maximum reverse recovery current | A | IF = 60 A, di/dt = 200 A/s, VR = 400 V, TJ = 125 C | 10 | |||
| trr | Reverse recovery time | ns | IF = 60 A, di/dt = 1000 A/s, VR = 400 V, TJ = 125 C | 80 | |||
| Qrr | Reverse recovery charge | nC | IF = 60 A, di/dt = 1000 A/s, VR = 400 V, TJ = 125 C | 1900 | |||
| IRRM | Maximum reverse recovery current | A | IF = 60 A, di/dt = 1000 A/s, VR = 400 V, TJ = 125 C | 38 | |||
| Thermal and Mechanical Characteristics | |||||||
| RJC | Junction-to-case thermal resistance | C/W | 0.34 | ||||
| RJA | Junction-to-ambient thermal resistance | C/W | 40 | ||||
| Wt | Package weight | 0.22 | oz | ||||
| 6.2 | g | ||||||
| Mounting torque | 10 | lbf-in | |||||
| 1.1 | N-m | ||||||
2410122116_MICROCHIP-APT60D60BG_C5444773.pdf
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