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quality N Channel Power MOSFET MIRACLE POWER MPC10N65 with 10A continuous drain current and avalanche tested factory
quality N Channel Power MOSFET MIRACLE POWER MPC10N65 with 10A continuous drain current and avalanche tested factory

N Channel Power MOSFET MIRACLE POWER MPC10N65 with 10A continuous drain current and avalanche tested

Key Attributes
Model Number: MPC10N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
950mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
6.6pF
Number:
-
Input Capacitance(Ciss):
1.595nF
Output Capacitance(Coss):
134pF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
31.9nC@10V
Mfr. Part #:
MPC10N65
Package:
TO-220
Product Description

Product Overview

The MPC10N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 650V breakdown voltage, a continuous drain current of 10A, and a typical on-resistance of 0.80 at VGS = 10V. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing. This MOSFET is suitable for use in adapters, LCD/PDP adapters, and E-bike chargers.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Power MOSFET
  • Model: MPC10N65

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage ±30 ±30 V
ID Drain Current-Continuous, TC =25°C 10 A
ID Drain Current-Continuous, TC =100°C 6.3 A
IDM Drain Current-Pulsed 40 A
PD Maximum Power Dissipation @ TJ =25°C 130 W
EAS Single Pulsed Avalanche Energy 500 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-Case Max. 0.96 °C/W
RθJA Thermal Resistance Junction-Ambient Max 62.5 °C/W
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID =250μA 650 - - V
IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V - - 1 μA
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = ±30V - - ±100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250μA 2 - 4 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID =5A - 0.80 0.95 Ω
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 1595 - pF
Coss Output Capacitance - 134 - pF
Crss Reverse Transfer Capacitance - 6.6 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 325V, ID =10A, RG = 25Ω,VGS=10V - 25 - ns
tr Turn-On Rise Time - 21 - ns
td(off) Turn-Off Delay Time - 50 - ns
tf Turn-Off Fall Time - 23 - ns
Qg Total Gate Charge VDS = 325V, ID =10A, VGS = 10V - 31.9 - nC
Qgs Gate-Source Charge - 8.1 - nC
Qgd Gate-Drain Charge - 11.9 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 10 A
ISM Maximum Pulsed Current VGS = 0V - - 40 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 10A - - 1.4 V
Trr Body Diode Reverse Recovery Time di/dt=100A/us IS=10A,VGS=0V - 498 - ns
Qrr Reverse Recovery Charge - 3039 - nC

2410122015_MIRACLE-POWER-MPC10N65_C17701984.pdf

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