High Voltage Power Diode MICROCHIP APT2X61DQ120J With Ultrafast Recovery And Low Forward Voltage
Key Attributes
Model Number:
APT2X61DQ120J
Product Custom Attributes
Mfr. Part #:
APT2X61DQ120J
Product Description
Product Overview
The ULTRAFAST SOFT RECOVERY RECTIFIER DIODE APT2x61DQ120J and APT2x60DQ120J are high-reliability diodes designed for demanding power applications. They offer low losses, low noise switching, and cooler operation, contributing to increased system power density. Key features include ultrafast recovery times, soft recovery characteristics, popular SOT-227 package, low forward voltage, high blocking voltage, low leakage current, and avalanche energy rating.
Product Attributes
- Brand: Microsemi
- Package: SOT-227 (ISOTOP)
- Certifications: UL Recognized
- Registered Trademark: ISOTOP is a registered trademark of ST Microelectronics NV.
Technical Specifications
| Model | Voltage (V) | Current (A) | Package | Certifications |
| APT2x61DQ120J | 1200 | 60 | SOT-227 | UL Recognized |
| APT2x60DQ120J | 1200 | 60 | SOT-227 | UL Recognized |
| Characteristic / Test Conditions | Symbol | MIN | TYP | MAX | UNIT |
| Forward Voltage, IF = 60A | VF | 2.5 | Volts | ||
| Forward Voltage, IF = 120A | VF | 3.1 | Volts | ||
| Maximum Reverse Leakage Current, VR = 200V | IRM | 3.07 | A | ||
| Maximum Reverse Leakage Current, IF = 60A, TJ = 125C | IRM | 1.82 | A | ||
| Junction Capacitance, VR = 1200V | CT | 100 | pF | ||
| Junction Capacitance, VR = 1200V, TJ = 125C | CT | 500 | pF | ||
| Maximum D.C. Reverse Voltage | VR | 1200 | Volts | ||
| Maximum Peak Repetitive Reverse Voltage | VRRM | 1200 | Volts | ||
| Maximum Working Peak Reverse Voltage | VRWM | 1200 | Volts | ||
| Maximum Average Forward Current (TC = 85C, Duty Cycle = 0.5) | IF(AV) | 60 | Amps | ||
| RMS Forward Current (Square wave, 50% duty) | IF(RMS) | 73 | Amps | ||
| Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) | IFSM | 540 | Amps | ||
| Avalanche Energy (1A, 40mH) | EAVL | 20 | mJ | ||
| Operating and StorageTemperature Range | TJ,TSTG | -55 | 175 | C | |
| Junction-to-Case Thermal Resistance | RJC | 0.56 | C/W | ||
| RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) | VIsolation | 2500 | Volts | ||
| Package Weight | WT | 1.03 | oz | ||
| Maximum Mounting Torque | Torque | 10 | lbin |
| Characteristic / Test Conditions | Symbol | MIN | TYP | MAX | UNIT |
| Reverse Recovery Time, IF = 60A, diF/dt = -200A/s, VR = 800V, TC = 25C | trr | 60 | ns | ||
| Reverse Recovery Charge, IF = 60A, diF/dt = -200A/s, VR = 800V, TC = 25C | Qrr | 265 | nC | ||
| Maximum Reverse Recovery Current, IF = 60A, diF/dt = -200A/s, VR = 800V, TC = 25C | IRRM | 560 | Amps | ||
| Reverse Recovery Time, IF = 60A, diF/dt = -200A/s, VR = 800V, TC = 125C | trr | 5 | ns | ||
| Reverse Recovery Charge, IF = 60A, diF/dt = -200A/s, VR = 800V, TC = 125C | Qrr | 350 | nC | ||
| Maximum Reverse Recovery Current, IF = 60A, diF/dt = -200A/s, VR = 800V, TC = 125C | IRRM | 2890 | Amps | ||
| Reverse Recovery Time, IF = 60A, diF/dt = -1000A/s, VR = 800V, TC = 125C | trr | 13 | ns | ||
| Reverse Recovery Charge, IF = 60A, diF/dt = -1000A/s, VR = 800V, TC = 125C | Qrr | 150 | nC | ||
| Maximum Reverse Recovery Current, IF = 60A, diF/dt = -1000A/s, VR = 800V, TC = 125C | IRRM | 4720 | Amps | ||
| Reverse Recovery Time, IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C | trr | 40 | ns |
2410311027_MICROCHIP-APT2X61DQ120J_C21306142.pdf
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