1200 Volt 30 Amp Silicon Carbide Schottky Diode MSC030SDA120K with Zero Recovery Characteristic
Key Attributes
Model Number:
MSC030SDA120K
Product Custom Attributes
Reverse Leakage Current (Ir):
200uA@1200V
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.8V@30A
Current - Rectified:
70A
Mfr. Part #:
MSC030SDA120K
Package:
TO-220-2
Product Description
Microsemi MSC030SDA120K Zero Recovery Silicon Carbide Schottky Diode
The MSC030SDA120K is a 1200 V, 30 A Silicon Carbide (SiC) Schottky Barrier Diode (SBD) in a two-lead TO-220 package. It offers enhanced performance and lower total cost of ownership for high-voltage applications compared to traditional silicon diodes. Key features include zero recovery characteristics, low forward voltage, and low leakage current, leading to benefits such as high switching frequency, reduced switching losses, lower EMI, and increased system reliability and power density. This device is suitable for applications including Power Factor Correction (PFC), anti-parallel diodes, switch-mode power supplies, inverters/converters, motor controllers, and snubber/clamp diodes.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide (SiC)
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Conditions | |
| Absolute Maximum Ratings | Maximum DC reverse voltage | 1200 | V | ||
| Maximum peak repetitive reverse voltage | V | ||||
| Maximum working peak reverse voltage | V | ||||
| Maximum DC forward current | IF | 70 | A | TC = 25 C | |
| 32 | A | TC = 135 C | |||
| 27 | A | TC = 145 C | |||
| Repetitive peak forward surge current (tp = 8.3 ms, half sine wave) | IFRM | 92 | A | ||
| Non-repetitive forward surge current (tp = 8.3 ms, half sine wave) | IFSM | 165 | A | ||
| Power Dissipation | PTOT | 300 | W | TC = 25 C | |
| 130 | W | TC = 110 C | |||
| Operating junction and storage temperature range | TJ, TSTG | 55 to 175 | C | ||
| Lead temperature for 10 seconds | TL | 300 | C | ||
| Single pulse avalanche energy (starting TJ = 25 C, L = 0.22 mH, IL peak = 30 A) | EAS | 100 | mJ | ||
| Thermal and Mechanical Characteristics | Junction-to-case thermal resistance | RJC | 0.35 - 0.50 | C/W | |
| Package weight | Wt | 1.9 | g | ||
| Mounting torque, 6-32 or M3 screw | 1.1 | N-m | |||
| Electrical Performance (Static Characteristics) | Forward Voltage | VF | 1.5 - 1.8 | V | IF = 30 A, TJ = 25 C |
| 2.1 | V | IF = 30 A, TJ = 175 C | |||
| Reverse leakage current | IRM | 9 - 200 | A | VR = 1200 V, TJ = 25 C | |
| 150 | A | VR = 1200 V, TJ = 175 C | |||
| Total capacitive charge | QC | 130 | nC | VR = 600 V, TJ = 25 C | |
| Junction capacitance | CJ | 141 | pF | VR = 400 V, TJ = 25 C, = 1 MHz | |
| 105 | pF | VR = 800 V, TJ = 25 C, = 1 MHz |
2411272110_MICROCHIP-MSC030SDA120K_C6600440.pdf
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