MDD Microdiode Semiconductor MDD3407 SOT23 P Channel MOSFET Designed for Load Switch and Line Driver

Key Attributes
Model Number: MDD3407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-
RDS(on):
43mΩ@10V;66mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Number:
1 P-Channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
493pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
8.2nC@10V
Mfr. Part #:
MDD3407
Package:
SOT-23
Product Description

Product Overview

The MDD3407 is a -30V P-Channel Enhancement Mode MOSFET designed for various switching and power management applications. It features low on-resistance, logic-level control, and is suitable for high-speed line drivers, load switches, and general-purpose switching circuits. The device is available in a compact SOT-23 package.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Absolute Maximum RatingsVDS-30V
VGS±20V
ID(Note 2)-4.1A
Power DissipationPD(Note 2)1.2W
RJA(Note 2)80/W
Junction and Storage TemperatureTJ,Tstg-50150
Pulsed Drain CurrentIDM(Note 1)-16.4A
Drain-Source Breakdown VoltageV(BR)DSSVGS=0V, ID=-250A-30V
Gate-Source Leakage CurrentIDSSVDS=-30V, VGS=0V-1uA
Drain-Source Leakage CurrentIGSSVGS=±20V, VDS=0V±100nA
Gate Threshold VoltageVGS(TH)VDS=VGS, ID=-250A-1.2-2.5V
Drain-Source On-State ResistanceRDS(ON)VGS=-10V, ID=-4A (Note 3)55m
VGS=-4.5V, ID=-3A (Note 3)66m
Dynamic Electrical CharacteristicsCissVDS=-15V, VGS=0V, f=1MHz493pF
CossVDS=-15V, VGS=0V, f=1MHz65pF
CrssVDS=-15V, VGS=0V, f=1MHz44pF
Switching Characteristicstd(on)VDS=-15V, VGS =-10V, ID=-1A, RG=3.37.2ns
trVDS=-15V, VGS =-10V, ID=-1A, RG=3.34.8ns
td(off)VDS=-15V, VGS =-10V, ID=-1A, RG=3.325ns
tfVDS=-15V, VGS =-10V, ID=-1A, RG=3.38.5ns
Source Drain Diode CharacteristicsISD-2A
VSDIS=-1A, VGS=0V-0.88-1.2V

2411211951_MDD-Microdiode-Semiconductor-MDD3407_C427386.pdf

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