Power MOSFET Miracle Power MPF06N90 with High Breakdown Voltage and Low Reverse Transfer Capacitance
Key Attributes
Model Number:
MPF06N90
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
9A
RDS(on):
2.3Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5.2pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.435nF@25V
Pd - Power Dissipation:
33W
Gate Charge(Qg):
31.1nC@10V
Mfr. Part #:
MPF06N90
Package:
TO-220F
Product Description
Product Overview
The MPF06N90 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for power switch circuits in adaptors and chargers. It features a high breakdown voltage of 900V and a continuous drain current of 6A at 25C. This MOSFET offers low ON resistance (Typ. 1.95 @ VGS = 10V), low gate charge, low reverse transfer capacitance, and fast switching characteristics. It is 100% avalanche tested for enhanced reliability.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MPF Series
- Technology: Miracle Technology
- Channel Type: N-Channel
- Product Type: Power MOSFET
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, ON Resistance | 900V, 6A, RDS(ON)(Typ.) = 1.95@VGS = 10V | |||||
| Low ON Resistance | ||||||
| Low Gate Charge | ||||||
| Low Reverse Transfer Capacitance | ||||||
| Fast Switching | ||||||
| 100% Avalanche Tested | ||||||
| Application | ||||||
| Power switch circuit of adaptor and charger | ||||||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 900 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 6 | A | |||
| ID | Drain Current-Continuous, TC =100C | 3.7 | A | |||
| IDM | Drain Current-Pulsed b | 24 | A | |||
| PD | Maximum Power Dissipation @ TJ =25C | 33 | W | |||
| EAS | Single Pulsed Avalanche Energy d | 466 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | 3.8 | C/W | |||
| RJA | Thermal Resistance Junction-Ambient | 62.5 | C/W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | TJ = 25C unless otherwise noted | |||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 900 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 900V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | A |
| On Characteristics | TJ = 25C unless otherwise noted | |||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | - | 4 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID =3A | - | 1.95 | 2.3 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1435 | - | pF |
| Coss | Output Capacitance | - | 100 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 5.2 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 450V, ID =6A, RG = 10,VGS=10V | - | 17.6 | - | ns |
| tr | Turn-On Rise Time | - | 17.2 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 43.6 | - | ns | |
| tf | Turn-Off Fall Time | - | 20.2 | - | ns | |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS = 720V, ID =6A, VGS = 10V | - | 31.1 | - | nC |
| Qgs | Gate-Source Charge | - | 13.6 | - | nC | |
| Qgd | Gate-Drain Charge | - | 6.3 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 6 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 24 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 6A | - | - | 1.5 | V |
| trr | Reverse Recovery Time | IS=6A,Tj= 25 dIF/dt=100A/us, VGS=0V | - | 727 | - | ns |
| Qrr | Reverse Recovery Charge | - | 5.26 | - | uC | |
2408011701_MIRACLE-POWER-MPF06N90_C34373724.pdf
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