MDD Microdiode Semiconductor MDD02P60A 60V P channel MOSFET with low RDS ON and fast switching speed
Key Attributes
Model Number:
MDD02P60A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2A
RDS(on):
140mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 P-Channel
Output Capacitance(Coss):
27pF
Pd - Power Dissipation:
1.7W
Input Capacitance(Ciss):
450pF
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
MDD02P60A
Package:
SOT-23
Product Description
Product Overview
This 60V P-channel MOSFET is engineered with MDD's advanced device design, delivering low RDS(ON), rapid switching speeds, and superior avalanche characteristics. It is ideal for load switching in portable devices, battery-powered systems, DC-DC converters, LCD display inverters, and other portable equipment.
Product Attributes
- Brand: Microdiode
- Origin: Craftsman-Made Consciention Chip
- Model: MDD02P60A
- Revision: 2024A0
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (TA =25C unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Note 1) | ID | -2.0 | A | |||
| Pulsed Drain Current (Note 1) | IDM | -8.0 | A | |||
| Power Dissipation | PD | 1.7 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature | Tstg | -55 | 150 | C | ||
| Thermal Resistance, Junction-Ambient (Note 2) | RJA | Surface Mounted on FR4 Board, t10 sec. | 75 | C/W | ||
| Electrical Characteristics (TA=25C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -60 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=-60V, VGS=20V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=-60V, VGS=0V | -1 | -10 | A | |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250A | -1.0 | -1.5 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-2A | 140 | 175 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-1.8A | 178 | 215 | m | |
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VGS=-10V, VDS=-30V, ID=-2A, RG=3.3 | 10 | ns | ||
| Turn on Rise Time | tr | VGS=-10V, VDS=-30V, ID=-2A, RG=3.3 | 15 | ns | ||
| Turn Off Fall Time | tf | VGS=-10V, VDS=-30V, ID=-2A, RG=3.3 | 35 | ns | ||
| Turn Off Delay Time | td(off) | VGS=-10V, VDS=-30V, ID=-2A, RG=3.3 | 40 | ns | ||
| Source Drain Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | IS=-2A, VGS=0V | -0.8 | -1.2 | V | |
| Source drain current(Body Diode) | IS | -2.0 | A | |||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=-30V, f=1.0MHz | 450 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=-30V, f=1.0MHz | 27 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-30V, f=1.0MHz | 9 | pF | ||
| Total Gate Charge | Qg | VGS=-10V, VDS=-30V, ID=-2A | 1.6 | nC | ||
| Gate Source Charge | Qgs | VGS=-10V, VDS=-30V, ID=-2A | 1.9 | nC | ||
| Gate Drain Charge | Qgd | VGS=-10V, VDS=-30V, ID=-2A | nC | |||
2507221720_MDD-Microdiode-Semiconductor-MDD02P60A_C49383125.pdf
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