High Ruggedness 650V N Channel MOSFET MDD Microdiode Semiconductor MDD7N65F for Electronic Lamp Ballasts
Key Attributes
Model Number:
MDD7N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
6.1pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.09nF@25V
Pd - Power Dissipation:
100W
Gate Charge(Qg):
20.7nC
Mfr. Part #:
MDD7N65F
Package:
TO-220F
Product Description
Product Overview
The MDD7N65F/MDD7N65P/MDD7N65D is a 650V N-Channel Enhancement Mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and improved dv/dt capability for high ruggedness. Avalanche energy and peak diode recovery dv/dt are tested.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | Package | VDS (V) | ID (Tc=25) (A) | RDS(on),max () @VGS=10V | Qg,typ (nC) | Package Marking | Units/Tube | Units/Reel |
| MDD7N65F | TO-220F-3L | 650 | 7 | 1.4 | 20.7 | 7N65F | 50 | - |
| MDD7N65P | TO-220-3L | 650 | 7 | 1.4 | 20.7 | 7N65P | 50 | - |
| MDD7N65D | TO-252 | 650 | 7 | 1.4 | 20.7 | 7N65D | - | 2500 |
2408090958_MDD-Microdiode-Semiconductor-MDD7N65F_C5299405.pdf
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