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quality Nexperia PMBT3906 215 PNP Transistor in SOT23 Package Ideal for Switching and Amplification Circuits factory
quality Nexperia PMBT3906 215 PNP Transistor in SOT23 Package Ideal for Switching and Amplification Circuits factory

Nexperia PMBT3906 215 PNP Transistor in SOT23 Package Ideal for Switching and Amplification Circuits

Key Attributes
Model Number: PMBT3906,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
250MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PMBT3906,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PMBT3906 is a PNP switching transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. Designed for general amplification and switching applications, this transistor offers a collector-emitter voltage (VCEO) of -40 V and a collector current (IC) capability of -200 mA. Its NPN complement is the PMBT3904.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23 (TO-236AB)
  • Transistor Type: PNP Switching Transistor
  • Complementary NPN Transistor: PMBT3904

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - -40 V
IC Collector current - - - -200 mA
VCBO Collector-base voltage open emitter - - -40 V
VEBO Emitter-base voltage open collector - - -6 V
ICM Peak collector current - - - -200 mA
IBM Peak base current - - - -100 mA
Ptot Total power dissipation Tamb 25 C - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - +150 C
Tstg Storage temperature - -65 - +150 C
Rth(j-a) Thermal resistance from junction to ambient in free air - - 500 K/W
ICBO Collector-base cut-off current VCB = -30 V; IE = 0 A - - -50 nA
IEBO Emitter-base cut-off current VEB = -6 V; IC = 0 A - - -50 nA
hFE DC current gain VCE = -1 V; IC = -0.1 mA 60 - - -
VCE = -1 V; IC = -1 mA 80 - - -
VCE = -1 V; IC = -10 mA 100 - 300 -
VCE = -1 V; IC = -50 mA 60 - - -
VCE = -1 V; IC = -100 mA 30 - - -
VCEsat Collector-emitter saturation voltage IC = -10 mA; IB = -1 mA - - -250 mV
IC = -50 mA; IB = -5 mA - - -400 mV
VBEsat Base-emitter saturation voltage IC = -10 mA; IB = -1 mA - - -850 mV
IC = -50 mA; IB = -5 mA - - -950 mV
td Delay time ICon = -10 mA; IBon = -1 mA; IBoff = 1 mA - - 35 ns
tr Rise time - - - 35 ns
ton Turn-on time - - - 70 ns
ts Storage time - - - 225 ns
tf Fall time - - - 75 ns
toff Turn-off time - - - 300 ns
fT Transition frequency VCE = -20 V; IC = -10 mA; f = 100 MHz 250 - - MHz
Cc Collector capacitance VCB = -5 V; IE = ie = 0 A; f = 1 MHz - - 4.5 pF
Ce Emitter capacitance VEB = -500 mV; IC = ic = 0 A; f = 1 MHz - - 10 pF
NF Noise figure IC = -100 A; VCE = -5 V; RS = 1 k; f = 10 Hz to 15.7 kHz - - 4 dB

2410121717_Nexperia-PMBT3906-215_C8670.pdf

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