MICROCHIP VP2450N8 G vertical DMOS FET offering ease of paralleling and drive for driver applications
Key Attributes
Model Number:
VP2450N8-G
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
160mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
30Ω@10V,100mA
Gate Threshold Voltage (Vgs(th)):
3.5V@1mA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 P-Channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
190pF
Pd - Power Dissipation:
1.6W
Gate Charge(Qg):
-
Mfr. Part #:
VP2450N8-G
Package:
SOT-89
Product Description
Product Overview
The VP2450 is a low-threshold, P-Channel Enhancement-mode Vertical DMOS FET designed for switching and amplifying applications. It offers advantages such as freedom from secondary breakdown, low power drive requirements, ease of paralleling, low CISS and fast switching speeds, high input impedance and high gain, and excellent thermal stability. This device is ideally suited for motor controls, converters, amplifiers, switches, power supply circuits, and various driver applications.
Product Attributes
- Brand: Microchip Technology Inc.
- Origin: Silicon gate manufacturing process
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| DC PARAMETERS | ||||||
| Drain-to-source Breakdown Voltage | BVDSS | 500 | V | VGS = 0V, ID = 250 A | ||
| Gate Threshold Voltage | VGS(th) | 1.5 | 3.5 | V | VGS = VDS, ID = 1 mA | |
| Change in VGS(th) with Temperature | VGS(th) | 4.8 | mV/C | VGS = VDS, ID = 1 mA | ||
| Gate Body Leakage Current | IGSS | 100 | nA | VGS = 20V, VDS = 0V | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | A | VGS = 0V, VDS = Maximum Rating | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | mA | VDS = 0.8 Maximum Rating, VGS = 0V, TA = 125C | ||
| On-state Drain Current | ID(ON) | 75 | mA | VGS = 4.5V, VDS = 15V | ||
| On-state Drain Current | ID(ON) | 200 | mA | VGS = 10V, VDS = 15V | ||
| Static Drain-to-source On-state Resistance | RDS(ON) | 35 | VGS = 4.5V, ID = 50 mA | |||
| Static Drain-to-source On-state Resistance | RDS(ON) | 30 | VGS = 10V, ID = 100 mA | |||
| Change in RDS(ON) with Temperature | RDS(ON) | 0.75 | %/C | VGS = 10V, ID = 100 mA | ||
| AC PARAMETERS | ||||||
| Forward Transconductance | GFS | 150 | 320 | mmho | VDS = 15V, ID = 100 mA | |
| Input Capacitance | CISS | 190 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||
| Common Source Output Capacitance | COSS | 75 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||
| Reverse Transfer Capacitance | CRSS | 20 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||
| Turn-on Delay Time | td(ON) | 10 | ns | VDD = 25V, ID = 200 mA, RGEN = 25 | ||
| Rise Time | tr | 25 | ns | VDD = 25V, ID = 200 mA, RGEN = 25 | ||
| Turn-off Delay Time | td(OFF) | 45 | ns | VDD = 25V, ID = 200 mA, RGEN = 25 | ||
| Fall Time | tf | 25 | ns | VDD = 25V, ID = 200 mA, RGEN = 25 | ||
| DIODE PARAMETER | ||||||
| Diode Forward Voltage Drop | VSD | 1.8 | V | VGS = 0V, ISD = 100 mA | ||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = 100 mA | ||
| TEMPERATURE SPECIFICATIONS | ||||||
| Operating Temperature | TA | 55 | +150 | C | ||
| Storage Temperature | TS | 55 | +150 | C | ||
| PACKAGE THERMAL RESISTANCE | ||||||
| TO-92 | JA | 133 | C/W | |||
| SOT-89 | JA | 132 | C/W | |||
| THERMAL CHARACTERISTICS | ||||||
| Package | ID (Continuous) (mA) | ID (Pulsed) (mA) | Power Dissipation at TA= 25C (W) | IDR (Note 1) (mA) | IDRM (mA) | |
| TO-92 | 100 | 300 | 0.74 | 100 | 300 | |
| SOT-89 | 160 | 800 | 1.6 (Note 2) | 160 | 800 | |
2410121614_MICROCHIP-VP2450N8-G_C144242.pdf
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