Plastic Package NPN Medium Power Transistor Nexperia BC868 115 Series Surface Mount SOT89 SMD Devices

Key Attributes
Model Number: BC868,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.35W
Transition Frequency(fT):
170MHz
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC868,115
Package:
SOT-89
Product Description

Nexperia BCP68; BC868; BC68PA NPN Medium Power Transistors

Product Overview

The Nexperia BCP68, BC868, and BC68PA series are NPN medium power transistors designed for surface-mounted devices (SMD) in plastic packages. These transistors offer high current capabilities, multiple current gain selections, and high power dissipation. Key features include an exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) and a leadless, very small SMD plastic package with medium power capability (SOT1061). They are AEC-Q101 qualified, making them suitable for demanding applications such as linear voltage regulators, power management, low-side switches, MOSFET drivers, battery-driven devices, and amplifiers.

Product Attributes

  • Brand: Nexperia
  • Type: NPN Medium Power Transistor
  • Qualification: AEC-Q101 Qualified

Technical Specifications

Type Number Package Description PNP Complement Max Collector Current (IC) Max Collector-Emitter Voltage (VCEO)
BCP68 SOT223 (SC-73) Plastic surface-mounted package with increased heatsink; 4 leads BCP69 2 A 20 V
BC868 SOT89 (SC-62 / TO-243) Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads BC869 2 A 20 V
BC68PA SOT1061 (HUSON3) Thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm BC69PA 2 A 20 V
Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 20 V
IC Collector current - - - 2 A
ICM Peak collector current single pulse; tp 1 ms - - 3 A
hFE DC current gain VCE = 1 V; IC = 500 mA 85 - 375 -
hFE DC current gain (selection) VCE = 1 V; IC = 500 mA 160 - 375 -
VCBO Collector-base voltage open emitter - - 32 V
VEBO Emitter-base voltage open collector - - 5 V
IB Base current - - - 0.4 A
IBM Peak base current single pulse; tp 1 ms - - 0.4 A
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -55 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient BCP68 [1] - - 192 K/W
Rth(j-a) Thermal resistance junction to ambient BC868 [1] - - 250 K/W
Rth(j-a) Thermal resistance junction to ambient BC68PA [1] - - 298 K/W
Rth(j-sp) Thermal resistance junction to solder point BCP68 - - 16 K/W
Rth(j-sp) Thermal resistance junction to solder point BC868 - - 16 K/W
Rth(j-sp) Thermal resistance junction to solder point BC68PA - - 20 K/W
ICBO Collector-base cut-off current VCB = 25 V; IE = 0 A - - 100 nA
ICBO Collector-base cut-off current VCB = 25 V; IE = 0 A; Tj = 150 C - - 10 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA
hFE DC current gain VCE = 10 V; IC = 5 mA 50 - - -
hFE DC current gain VCE = 1 V; IC = 500 mA 85 - 375 -
hFE DC current gain VCE = 1 V; IC = 1 A 60 - - -
hFE DC current gain VCE = 1 V; IC = 2 A 40 - - -
VCEsat Collector-emitter saturation voltage IC = 1 A; IB = 100 mA - - 0.5 V
VCEsat Collector-emitter saturation voltage IC = 2 A; IB = 200 mA - - 0.6 V
VBE Base-emitter voltage VCE = 10 V; IC = 5 mA - - 0.7 V
VBE Base-emitter voltage VCE = 1 V; IC = 1 A - - 1 V
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 22 - pF
fT Transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz 40 170 - MHz

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.


2410121755_Nexperia-BC868-115_C130419.pdf

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