Nexperia PMBT4401 215 transistor with 600 mA collector current and AEC Q101 automotive qualification
Key Attributes
Model Number:
PMBT4401,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
PMBT4401,215
Package:
SOT-23
Product Description
Product Overview
The Nexperia PMBT4401 is an NPN switching transistor designed for industrial and consumer switching applications. It features high current capability (up to 600 mA) and low voltage operation (up to 40 V). This transistor is AEC-Q101 qualified, making it suitable for automotive applications. Its PNP complement is the PMBT4403.
Product Attributes
- Brand: Nexperia
- Product Type: NPN Switching Transistor
- Package Type: SOT23 (plastic, surface-mounted device)
- Qualification: AEC-Q101 qualified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | 40 | V |
| IC | Collector current | - | - | - | 600 | mA |
| hFE | DC current gain | VCE = 1 V; IC = 150 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 100 | - | 300 | - |
| VCBO | Collector-base voltage | open emitter | - | - | 60 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 6 | V |
| ICM | Peak collector current | - | - | - | 800 | mA |
| IBM | Peak base current | - | - | - | 200 | mA |
| Ptot | Total power dissipation | Tamb 25 C | - | - | 250 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air | - | 500 | - | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; Tamb = 25 C | 60 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 1 mA; Tamb = 25 C | 40 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage | IC = 100 A; Tamb = 25 C | 6 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 60 V; IE = 0 A; Tamb = 25 C | - | - | 50 | nA |
| IEBO | Emitter-base cut-off current | VEB = 6 V; IC = 0 A; Tamb = 25 C | - | - | 50 | nA |
| hFE | DC current gain | VCE = 1 V; IC = 0.1 mA; Tamb = 25 C | 20 | - | - | - |
| hFE | DC current gain | VCE = 1 V; IC = 1 mA; Tamb = 25 C | 40 | - | - | - |
| hFE | DC current gain | VCE = 1 V; IC = 10 mA; Tamb = 25 C | 80 | - | - | - |
| hFE | DC current gain | VCE = 1 V; IC = 150 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 100 | - | 300 | - |
| hFE | DC current gain | VCE = 2 V; IC = 500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 40 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 150 mA; IB = 15 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 400 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 750 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 150 mA; IB = 15 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 950 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 1.2 | V |
| Cc | Collector capacitance | VCB = 5 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 8 | pF |
| Ce | Emitter capacitance | VEB = 500 mV; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 30 | pF |
| fT | Transition frequency | VCE = 10 V; IC = 20 mA; f = 100 MHz; Tamb = 25 C | 250 | - | - | MHz |
| td | Delay time | Switching times (between 10 % and 90 % levels) | - | - | 15 | ns |
| tr | Rise time | Switching times (between 10 % and 90 % levels) | - | - | 20 | ns |
| ton | Turn-on time | Switching times (between 10 % and 90 % levels) | - | - | 35 | ns |
| ts | Storage time | Switching times (between 10 % and 90 % levels) | - | - | 200 | ns |
| tf | Fall time | Switching times (between 10 % and 90 % levels) | - | - | 60 | ns |
| toff | Turn-off time | IC = 150 mA; IBon = 15 mA; IBoff = -15 mA; Tamb = 25 C | - | - | 250 | ns |
2410010403_Nexperia-PMBT4401-215_C81180.pdf
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