1200 volt 254 amp silicon carbide power module MSCSM120SKM11CT3AG for buck chopper power conversion
Key Attributes
Model Number:
MSCSM120SKM11CT3AG
Product Custom Attributes
Voltage - Isolation:
4000Vrms
Mfr. Part #:
MSCSM120SKM11CT3AG
Product Description
MSCSM120SKM11CT3AG Buck Chopper SiC MOSFET Power Module
The MSCSM120SKM11CT3AG is a 1200 V/254 A full Silicon Carbide (SiC) power module designed for buck chopper applications. It offers high efficiency, outstanding performance at high frequency operation, and direct mounting to heatsinks due to its isolated package. Key features include SiC Power MOSFETs with high-speed switching and ultra-low loss, SiC Schottky Diodes with zero reverse recovery, very low stray inductance, Kelvin source for easy drive, an internal thermistor for temperature monitoring, and an aluminum nitride (AlN) substrate for improved thermal performance. Benefits include high efficiency converters, solderable terminals for easy PCB mounting, a low profile, and RoHS compliance. This module is suitable for uninterruptible power supplies, induction heating and welding, and solar inverters.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide (SiC), Aluminum Nitride (AlN) substrate
- Certifications: RoHS compliant
Technical Specifications
| Characteristic | Symbol | Unit | Min | Typ | Max | Test Conditions |
|---|---|---|---|---|---|---|
| SiC MOSFET Characteristics (Per MOSFET) | ||||||
| Drain-source voltage | VDSS | V | 1200 | |||
| Continuous drain current | ID | A | 254 | TC = 25 C | ||
| Pulsed drain current | IDM | A | 500 | TC = 80 C | ||
| Gate-source voltage | VGS | V | -10 | 25 | ||
| Drain source ON resistance | RDS(on) | m | 8.4 | 10.4 | 13.4 | TJ = 25 C, VGS = 20 V, ID = 120 A |
| Power dissipation | PD | W | 1067 | TC = 25 C | ||
| Zero gate voltage drain current | IDSS | A | 30 | 300 | VGS = 0 V; VDS = 1200 V | |
| Gate threshold voltage | VGS(th) | V | 1.8 | 2.8 | VGS = VDS, ID = 3 mA | |
| Gate-source leakage current | IGSS | nA | 300 | VGS = 20 V, VDS = 0 V | ||
| Input capacitance | Ciss | pF | 9060 | VGS = 0 V, VDS = 1000 V, f = 1 MHz | ||
| Output capacitance | Coss | pF | 810 | VGS = 0 V, VDS = 1000 V, f = 1 MHz | ||
| Reverse transfer capacitance | Crss | pF | 75 | VGS = 0 V, VDS = 1000 V, f = 1 MHz | ||
| Total gate charge | Qg | nC | 696 | VGS = 5 V/20 V, VBus = 800 V, ID= 120 A | ||
| Gatesource charge | Qgs | nC | 123 | VGS = 5 V/20 V, VBus = 800 V, ID= 120 A | ||
| Gatedrain charge | Qgd | nC | 150 | VGS = 5 V/20 V, VBus = 800 V, ID= 120 A | ||
| Turn-on delay time | Td(on) | ns | 30 | VGS = 5 V/20 V, VBus = 600 V, ID = 150 A, RGon = 2.7 ; RGoff = 1.6 | ||
| Rise time | Tr | ns | 30 | VGS = 5 V/20 V, VBus = 600 V, ID = 150 A, RGon = 2.7 ; RGoff = 1.6 | ||
| Turn-off delay time | Td(off) | ns | 50 | VGS = 5 V/20 V, VBus = 600 V, ID = 150 A, RGon = 2.7 ; RGoff = 1.6 | ||
| Fall time | Tf | ns | 25 | VGS = 5 V/20 V, VBus = 600 V, ID = 150 A, RGon = 2.7 ; RGoff = 1.6 | ||
| Turn on energy | Eon | mJ | 3 | TJ = 150 C, VGS = 5 V/20 V, VBus = 600 V, ID = 150 A, RGon = 2.7 ; RGoff = 1.6 | ||
| Turn off energy | Eoff | mJ | 2 | TJ = 150 C, VGS = 5 V/20 V, VBus = 600 V, ID = 150 A, RGon = 2.7 ; RGoff = 1.6 | ||
| Internal gate resistance | RGint | 2 | ||||
| Junction-to-case thermal resistance | RthJC | C/W | 0.141 | |||
| Diode forward voltage | VSD | V | 4.0 | 4.2 | VGS = 0 V; ISD = 120 A / VGS = 5 V; ISD = 120 A | |
| Reverse recovery time | trr | ns | 90 | ISD = 120 A; VGS = 5 V; VR = 800 V; diF/dt = 3000 A/s | ||
| Reverse recovery charge | Qrr | nC | 1650 | ISD = 120 A; VGS = 5 V; VR = 800 V; diF/dt = 3000 A/s | ||
| Reverse recovery current | Irr | A | 40.5 | ISD = 120 A; VGS = 5 V; VR = 800 V; diF/dt = 3000 A/s | ||
| SiC Schottky Diode Ratings and Characteristics | ||||||
| Peak repetitive reverse voltage | VRRM | V | 1200 | |||
| Reverse leakage current | IRM | A | 60 | 1200 | TJ = 25 C, VR = 1200 V / TJ = 175 C, VR = 1200 V | |
| DC forward current | IF | A | 180 | TC = 100 C | ||
| Diode forward voltage | VF | V | 1.5 | 1.8 | 2.1 | TJ= 25 C, IF = 180 A / TJ = 175 C, IF = 180 A |
| Total capacitive charge | Qc | nC | 780 | VR = 600 V | ||
| Total capacitance | C | pF | 846 | f = 1 MHz, VR = 400 V / f = 1 MHz, VR = 800 V | ||
| Junction-to-case thermal resistance | RthJC | C/W | 0.175 | |||
| Thermal and Package Characteristics | ||||||
| RMS isolation voltage | VISOL | V | 4000 | any terminal to case, t = 1 min, 50 Hz/60 Hz | ||
| Operating junction temperature range | TJ | C | -40 | 175 | ||
| Recommended junction temperature under switching conditions | TJOP | C | -40 | 125 | TJmax25 | |
| Storage temperature range | TSTG | C | -40 | 125 | ||
| Operating case temperature | TC | C | -40 | 125 | ||
| Mounting torque | Torque | N.m | 2 | 3 | M4 To heatsink | |
| Package weight | Wt | g | 110 | |||
| Temperature Sensor NTC | ||||||
| Resistance at 25 C | R25 | k | 50 | |||
| % R25/R25 | % | 5 | ||||
| B25/85 | K | 3952 | T25 = 298.15 K | |||
| % B/B | % | 4 | TC = 100 C | |||
2411271925_MICROCHIP-MSCSM120SKM11CT3AG_C3615223.pdf
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