Nexperia BCP53-16 115 PNP Medium Power Transistor for Linear Voltage Regulators and Power Management
Key Attributes
Model Number:
BCP53-16,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
1.35W
Transition Frequency(fT):
145MHz
Type:
PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BCP53-16,115
Package:
SOT-223
Product Description
Product Overview
The BCP53, BCX53, and BC53PA series are PNP medium power transistors designed for Surface-Mounted Device (SMD) applications. These transistors offer high current capability, multiple current gain selections, and high power dissipation. Features include an exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) and a leadless, very small SMD plastic package with medium power capability (SOT1061). They are AEC-Q101 qualified, making them suitable for demanding applications such as linear voltage regulators, high-side switches, battery-driven devices, power management, MOSFET drivers, and amplifiers.
Product Attributes
- Brand: NXP Semiconductors
- Product Type: PNP medium power transistors
- Certifications: AEC-Q101 qualified
Technical Specifications
| Type Number | Package | NPN Complement | Description | Max Collector-Emitter Voltage (VCEO) | Max Collector Current (IC) | Max Peak Collector Current (ICM) |
|---|---|---|---|---|---|---|
| BCP53 | SOT223 (SC-73) | BCP56 | Plastic surface-mounted package with increased heatsink; 4 leads | -80 V | -1 A | -2 A |
| BCX53 | SOT89 (SC-62 / TO-243) | BCX56 | Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads | -80 V | -1 A | -2 A |
| BC53PA | SOT1061 (HUSON3) | BC56PA | Plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm | -80 V | -1 A | -2 A |
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCBO) | Open emitter | - | - | -100 | V |
| Collector-Emitter Voltage (VCEO) | Open base | - | - | -80 | V |
| Emitter-Base Voltage (VEBO) | Open collector | - | - | -5 | V |
| Collector Current (IC) | - | - | - | -1 | A |
| Peak Collector Current (ICM) | Single pulse; tp ≤ 1 ms | - | - | -2 | A |
| Base Current (IB) | - | - | - | -0.3 | A |
| Peak Base Current (IBM) | Single pulse; tp ≤ 1 ms | - | - | -0.3 | A |
| Total Power Dissipation (Ptot) | Tamb ≤ 25 °C; BCP53 [1] | - | - | 0.65 | W |
| Tamb ≤ 25 °C; BCP53 [2] | - | - | 1.00 | W | |
| Tamb ≤ 25 °C; BCP53 [3] | - | - | 1.35 | W | |
| Total Power Dissipation (Ptot) | Tamb ≤ 25 °C; BCX53 [1] | - | - | 0.50 | W |
| Tamb ≤ 25 °C; BCX53 [2] | - | - | 0.95 | W | |
| Tamb ≤ 25 °C; BCX53 [3] | - | - | 1.35 | W | |
| Total Power Dissipation (Ptot) | Tamb ≤ 25 °C; BC53PA [1] | - | - | 0.42 | W |
| Tamb ≤ 25 °C; BC53PA [2] | - | - | 0.83 | W | |
| Tamb ≤ 25 °C; BC53PA [3] | - | - | 1.10 | W | |
| Total Power Dissipation (Ptot) | Tamb ≤ 25 °C; BC53PA [4] | - | - | 0.81 | W |
| Tamb ≤ 25 °C; BC53PA [5] | - | - | 1.65 | W | |
| Junction Temperature (Tj) | - | - | - | 150 | °C |
| Ambient Temperature (Tamb) | - | -55 | - | 150 | °C |
| Storage Temperature (Tstg) | - | -65 | - | 150 | °C |
| DC Current Gain (hFE) | VCE = -2 V; IC = -150 mA | 63 | - | 250 | - |
| DC Current Gain (hFE) | VCE = -2 V; IC = -150 mA; hFE selection -10 | 63 | - | 160 | - |
| DC Current Gain (hFE) | VCE = -2 V; IC = -150 mA; hFE selection -16 | 100 | - | 250 | - |
| Collector-Base Cut-off Current (ICBO) | VCB = -30 V; IE = 0 A | - | - | -100 | nA |
| Collector-Base Cut-off Current (ICBO) | VCB = -30 V; IE = 0 A; Tj = 150 °C | - | - | -10 | µA |
| Emitter-Base Cut-off Current (IEBO) | VEB = -5 V; IC = 0 A | - | - | -100 | nA |
| DC Current Gain (hFE) | VCE = -2 V; IC = -5 mA | 63 | - | - | - |
| DC Current Gain (hFE) | VCE = -2 V; IC = -150 mA | 63 | - | 250 | - |
| DC Current Gain (hFE) | VCE = -2 V; IC = -500 mA [1] | 40 | - | - | - |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = -500 mA; IB = -50 mA [1] | - | - | -0.5 | V |
| Base-Emitter Voltage (VBE) | VCE = -2 V; IC = -500 mA [1] | - | - | -1 | V |
| Collector Capacitance (Cc) | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | 15 | - | pF |
| Transition Frequency (fT) | VCE = -5 V; IC = -50 mA; f = 100 MHz | - | 145 | - | MHz |
| Package | Thermal Resistance (Rth(j-a)) | Conditions | Unit |
|---|---|---|---|
| BCP53 | 192 | [1] | K/W |
| 125 | [2] | K/W | |
| 93 | [3] | K/W | |
| BCX53 | 250 | [1] | K/W |
| 132 | [2] | K/W | |
| 93 | [3] | K/W | |
| BC53PA | 298 | [1] | K/W |
| 151 | [2] | K/W | |
| 114 | [3] | K/W | |
| BC53PA | 154 | [4] | K/W |
| BC53PA | 76 | [5] | K/W |
| Package | Thermal Resistance (Rth(j-sp)) | Unit |
|---|---|---|
| BCP53 | 16 | K/W |
| BCX53 | 16 | K/W |
| BC53PA | 20 | K/W |
2410121742_Nexperia-BCP53-16-115_C85085.pdf
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