N Channel Power MOSFET Minos IRFR540ZTRPBF MNS Featuring Low Gate Charge and High Current Capability
Key Attributes
Model Number:
IRFR540ZTRPBF-MNS
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
30A
RDS(on):
25mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
2.55nF
Output Capacitance(Coss):
225pF
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
IRFR540ZTRPBF-MNS
Package:
TO-252
Product Description
Product Overview
The IRFR540ZTRPBF is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design, fully characterized avalanche voltage and current, and good stability contribute to its reliability and performance.
Product Attributes
- Brand: Shenzhen Minos (mns-kx.com)
- Package: TO-252
- Origin: China (implied by contact information)
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 30 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 100 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 70 | W | ||
| Single pulse avalanche energy | EAS | 96 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ||
| Thermal Resistance, Junction-to-Case | RJC | 3.5 | /W | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 µA | |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 nA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 2 | 3 | 4 V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=12A | - | 25 | 30 mΩ | |
| Forward Transconductance | gFS | VDS=5V,ID=15A | - | 11 | - S | |
| Input Capacitance | Clss | VDS=25V, VGS=0V, f=1.0MHz | - | 2550 | - pF | |
| Output Capacitance | Coss | - | 225 | - pF | ||
| Reverse Transfer Capacitance | Crss | - | 205 | - pF | ||
| Turn-on Delay Time | td(on) | VDD=50V, ID=20A, VGS=10V, RGEN=10Ω | - | 29 | - nS | |
| Turn-on Rise Time | tr | - | 13 | - nS | ||
| Turn-Off Delay Time | td(off) | - | 58.2 | - nS | ||
| Turn-Off Fall Time | tf | - | 13.4 | - nS | ||
| Total Gate Charge | Qg | VDS=80V,ID=20A VGS=10V | - | 55 | - nC | |
| Gate-Source Charge | Qgs | - | 15 | - nC | ||
| Gate-Drain Charge | Qgd | - | 20 | - nC | ||
| Diode Forward Voltage | VSD | VGS=0V,IS=20A | - | - | 1.2 V | |
| Reverse Recovery Time | Trr | Tj=25℃, IF=10A, (note3) di/dt=100A/uS | - | 58 | - nS | |
| Reverse Recovery Charge | Qrr | - | 110 | - nC |
2506181720_Minos-IRFR540ZTRPBF-MNS_C49108794.pdf
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