High Current Gain PNP Darlington Transistor Minos TIP147 Ideal for Switching and Amplification Tasks
Key Attributes
Model Number:
TIP147
Product Custom Attributes
Current - Collector Cutoff:
1mA
DC Current Gain:
1000
Type:
PNP
Current - Collector(Ic):
10A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-
Mfr. Part #:
TIP147
Package:
TO-247
Product Description
Product Overview
This PNP Darlington transistor is designed for general-purpose applications. It offers a high current gain and is suitable for various switching and amplification tasks in electronic circuits.
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos (Shenzhen Minos Technology Co., Ltd.)
Technical Specifications
| Parameter | Symbol | Description | Min | Typical | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Sustaining Voltage | VCEO(SUS) | -100 | V | IC=-30mA, IB=0 | |||
| Collector Cutoff Current | ICEO | -1000 | mA | VCE=-50V, IB=0 | |||
| Collector Cutoff Current | ICBO | -500 | mA | VCB=-100V, IE=0 | |||
| Emitter Cutoff Current | IEBO | -0.15 | mA | VEB=-5V,IC=0 | |||
| DC Current Gain | HFE(1) | 0.55 | VCE=-4V, IC=-5A | ||||
| DC Current Gain | HFE(2) | 2.5 | VCE=-4V, IC=-10A | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | -2 | V | IC=-5A,IB=-10mA | |||
| Base-Emitter Saturation Voltage | VBE(sat) | -2.5 | V | IC=-10A,IB=-40mA | |||
| Base-Emitter On Voltage | VBE(on) | -3 | V | IC=-10A,IB=-40mA | |||
| Delay Time | tD | -3.5 | S | VCE=-4V, IC=-10A | |||
| Rise Time | tR | -3 | S | Vcc=-30V,IC=-5A | |||
| Storage Time | tS | -3 | S | IB1=-20mA, IB2= | |||
| Fall Time | tF | -3 | S |
| Parameter | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Storage Temperature | Tstg | -55~150 | ||
| Junction Temperature | Tj | 150 | ||
| Collector Power Dissipation | PC | 80 | W | Tc=25 |
| Collector-Base Voltage | VCBO | -100 | V | |
| Collector-Emitter Voltage | VCEO | -100 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -10 | A | |
| Base Current | IB | -0.5 | A |
Pin Configuration
- 1 - Base (B)
- 2 - Collector (C)
- 3 - Emitter (E)
Important Notes
- Exceeding the maximum ratings of the device may cause damage, including permanent failure, affecting machine dependability. Please adhere to absolute maximum ratings during circuit design.
- When installing a heat sink, pay attention to torsional moment and heat sink smoothness.
- MOSFETs are sensitive to static electricity; protect the device from static damage during use.
- Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
Contact Information
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Tel: 0755-83273777
2410121534_Minos-TIP147_C22389980.pdf
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