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quality Silicon NPN Triple Diffused Type Transistor Minos 2SC5198 Designed for 100W Power Amplifier and Audio Frequency factory
quality Silicon NPN Triple Diffused Type Transistor Minos 2SC5198 Designed for 100W Power Amplifier and Audio Frequency factory

Silicon NPN Triple Diffused Type Transistor Minos 2SC5198 Designed for 100W Power Amplifier and Audio Frequency

Key Attributes
Model Number: 2SC5198
Product Custom Attributes
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
100W
Transition Frequency(fT):
30MHz
Type:
NPN
Current - Collector(Ic):
10A
Collector - Emitter Voltage VCEO:
140V
Operating Temperature:
-
Mfr. Part #:
2SC5198
Package:
TO-3PS
Product Description

Product Overview

The Minos 2SC5198 is a Silicon NPN Triple Diffused Type transistor designed for power amplifier applications. It is complementary to the 2SA1941 and features a high collector voltage of 140V (min). This transistor is recommended for use in 100-W high-fidelity audio frequency amplifier output stages. Note: Continuous operation under heavy loads, such as high temperature, current, or voltage, or significant temperature changes, may significantly reduce product reliability even if operating conditions remain within absolute maximum ratings.

Product Attributes

  • Brand: MINOS
  • Origin: SHENZHEN MINOS TECHNOLOGY CO.,LTD
  • Type: Silicon NPN Triple Diffused Type
  • Complementary To: 2SA1941

Technical Specifications

Characteristics Symbol Rating Unit Test Condition Min Typ Max
Absolute Maximum Ratings (Tc=25)
Collector-base voltage VCBO 140 V
Collector-emitter voltage VCEO 140 V
Emitter-base voltage VEBO 5 V
Collector current IC 10 A
Base current IB 1 A
Collector power dissipation (Tc=25) PC 100 W
Junction temperature Tj 150
Storage temperature range TSTG -55~150
Electrical Characteristics (Tc=25)
Collector cut-off current ICBO uA VCB=140V; IE=0 5
Emitter cut-off current IEBO uA VEB=5V; Ic=0 5
Collector-emitter breakdown voltage V(BR)CEO 140 V IC=50mA,IB=0
DC current gain hFE VCE=5V; IC=1A 55 160
VCE=5V; IC=5A 35 83
Collector-emitter saturation voltage VCE(sat) V IC=8A; IB=0.8A 3.0
Base-emitter voltage VBE V VCE=5V;IC=5A 1.5
Transition frequency fT MHz VCE=5V; IC=1A 30
Typical Characteristics
Junction-to-Case thermal resistance RJC /W 0.35
Package Information
Package Type TO-3PS
Dimensions (TO-3PS PACKAGE)
Symbol Unit Min Nom Max
A mm 4.30 4.50 4.70
A1 mm 1.3 1.5 1.7
A2 mm 2.50 2.70 2.90
b mm 0.80 1.0 1.20
b1 mm 1.80 2.00 2.20
c mm 0.50 0.60 0.70
e mm 5.25 5.45 5.65
E mm 15.1 15.5 15.9
E1 mm 13.1 13.3 13.5
E2 mm 13.2 13.4 13.6
E3 mm 9.1 9.3 9.5
H mm 19.8 20.0 20.2
H1 mm 20.0 20.5 21.0
H2 mm 18.3 18.5 18.7
H3 mm 2.8 3.0 3.2
G mm 4.30 4.50 4.70
P mm 3.00 3.20 3.40

2409291234_Minos-2SC5198_C6719383.pdf

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