Darlington PNP Silicon Transistor Minos TIP127 Featuring Integrated Damping Diode for High Gain
Product Overview
This PNP Silicon Transistor is a Darlington transistor with an integrated damping diode, designed for high-gain circuits. It is suitable for applications requiring high amplification.
Product Attributes
- Brand: MNS
- Type: PNP Silicon Transistor (Darlington)
- Integrated Component: Damping Diode
Technical Specifications
| Parameter | Symbol | Description | Min | Typical | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | |||||||
| Storage Temperature | Tstg | -65 | 150 | ||||
| Junction Temperature | Tj | 150 | |||||
| Collector Dissipation Power | PC | (Tc=25) | 65 | W | |||
| Collector Dissipation Power | PC | (TA=25) | 2 | W | |||
| Collector-Base Voltage | CBO | -100 | V | ||||
| Collector-Emitter Voltage | CEO | -100 | V | ||||
| Emitter-Base Voltage | EBO | -5 | V | ||||
| Collector Current | IC | -5 | A | ||||
| Collector Current (Pulse) | ICP | -8 | A | ||||
| Base Current | IB | -120 | mA | ||||
| Electrical Characteristics | |||||||
| Collector-Base Breakdown Voltage | BVCBO | -100 | V | IC=1mA, IE=0 | |||
| Collector-Emitter Breakdown Voltage | BVCEO | -100 | V | IC=5mA, IB=0 | |||
| Collector-Emitter Cutoff Current | ICEO | -0.5 | mA | VCE=50V, IB=0 | |||
| Collector-Base Cutoff Current | ICBO | -0.2 | mA | VCB=100V, IE=0 | |||
| Emitter-Base Cutoff Current | IEBO | -2.0 | mA | VEB=5V, IC=0 | |||
| DC Current Gain | HFE | 1000 | VCE=3V, IC=0.5A | ||||
| Collector-Emitter Saturation Voltage | VCE(sat1) | -2.0 | V | IC=3A, IB=12mA | |||
| Collector-Emitter Saturation Voltage | VCE(sat2) | -4.0 | V | IC=5A, IB=20mA | |||
| Base-Emitter On Voltage | VBE(on) | -2.5 | V | VCE=3V, IC=3A | |||
| Common Base Output Capacitance | Cob | 200 | pF | VCB=10V, IE=0, f=0.1MHz | |||
Pin Configuration:
1 - Base (B)
2 - Collector (C)
3 - Emitter (E)
Notes:
1. Exceeding the maximum ratings of the device may cause permanent failure and affect dependability. Please adhere to absolute maximum ratings during circuit design.
2. When installing a heat sink, pay attention to torsional moment and heat sink smoothness.
3. MOSFETs are sensitive to static electricity; protect the device from static discharge during use.
4. Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
2412061751_Minos-TIP127_C6719390.pdf
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