Power MOSFET Minos MDT7N65 N Channel Device Suitable for Electronic Lamp Ballasts and Power Supplies
Key Attributes
Model Number:
MDT7N65
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
1.2Ω@10V,3.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.5nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
MDT7N65
Package:
TO-252
Product Description
Product Description
The MDT7N65 is a high-performance N-Channel Power MOSFET produced using Wisdom's advanced planar stripe, DMOS technology. This technology is engineered to minimize on-state resistance and provide high rugged avalanche characteristics. It is ideally suited for high-efficiency switch mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology.
Product Attributes
- Brand: Wisdom
- Origin: Shenzhen Minos (implied by contact information)
- Material: N-Channel Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Value | Units | Conditions | |
| Key Characteristics | VDS | 650 | V | |
| ID | 7 | A | ||
| RDS(ON) | <1.2 | VGS=10V | ||
| Gate Charge (Typical) | 28 | nC | ||
| Absolute Ratings | VDSS | 650 | V | |
| ID (Continuous) | 7 | A | TC=25C | |
| ID (Continuous) | 4.4 | A | TC = 100 C | |
| IDM (Pulsed) | 28 | A | (Note1) | |
| VGS | 30 | V | ||
| EAS (Single Pulse Avalanche Energy) | 420 | mJ | (Note2) | |
| Power Dissipation | PD (TO-252) | 48 | W | |
| Derating Factor above 25C | 0.38 | W/ | TO-252 | |
| Temperature Range | TLTJ, Tstg | 55 to 150 | Operating Junction and Storage | |
| Soldering Temperature | 300 | Maximum for Soldering | ||
| Thermal Characteristics (TO-252) | RJC | 2.6 | /W | Junction-to-Case |
| RJA | 62.5 | /W | Junction-to-Ambient | |
| Off Characteristics | BVDSS | 650 | V | VGS=0V, ID=250A |
| BVDSS/TJ | 0.6 | V/ | ID=250uA, Reference 25 | |
| IDSS | 1 | A | VDS =600V, VGS= 0V, Tj = 25 | |
| IDSS | 100 | A | VDS =480V, VGS= 0V, Tj = 125 | |
| Gate Leakage | IGSS(F) | 100 | nA | VGS =+30V |
| IGSS(R) | -100 | nA | VGS =-30V | |
| On Characteristics | RDS(ON) | 1.0 - 1.2 | VGS=10V, ID=3.5A | |
| VGS(TH) | 2.0 - 4.0 | V | VDS = VGS, ID = 250A | |
| Dynamic Characteristics | Rg | 25 | f = 1.0MHz | |
| Ciss | 1100 - 1500 | PF | VGS = 0V, VDS = 25V, F = 1.0MHz | |
| Coss | 110 - 150 | PF | ||
| Crss | 12 - 16 | PF | ||
| Switching Characteristics | td(ON) | 15 - 40 | ns | ID =7A, VDD = 300V, VGS = 10V, RG =25 |
| Tr | 30 - 70 | ns | ||
| td(OFF) | 110 | ns | ||
| tf | 40 - 90 | ns | ||
| Total Gate Charge | Qg | 28 - 37 | nC | ID =7A, VDS =480V, VGS = 10V |
| Source-Drain Diode Characteristics | IS | 7 | A | Continuous Source Current (Body Diode), TC=25 C |
| ISM | 28 | A | Maximum Pulsed Current (Body Diode) | |
| VSD | 1.4 | V | IS=7A, VGS=0V | |
| Reverse Recovery Time | Trr | 365 | ns | IS=7A, dIF/dt=100A/us, VGS=0V |
| Reverse Recovery Charge | Qrr | 3.4 | nC |
2410122024_Minos-MDT7N65_C5121601.pdf
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