Low Gate Charge Silicon P Channel MOSFET Minos MDT20P04D Suitable for Uninterruptible Power Supplies
Key Attributes
Model Number:
MDT20P04D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+175℃
RDS(on):
29mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
35pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
930pF@20V
Pd - Power Dissipation:
50W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
MDT20P04D
Package:
TO-252
Product Description
Product Overview
The MDT20P04D is a Silicon P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen, China
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | -20 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | -60 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 50 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case (TO-252) | RJC | 3.0 | /W | |||
| Thermal Resistance, Junction-to-Ambient (SOP-8) | RJA | 57 | /W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V,VGS=0V | -1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250μA | -1.0 | -1.5 | -2.4 | V |
| Drain-Source On-State Resistance (Note 2) | RDS(ON) | VGS=-10V, ID=-10A | 29 | 35 | mΩ | |
| Drain-Source On-State Resistance (Note 2) | RDS(ON) | VGS=-4.5V, ID=-5A | 34 | 45 | mΩ | |
| Forward Transconductance | gFS | VDS=-5V,ID=-15A | 10 | S | ||
| Dynamic Characteristics (Note 3) | ||||||
| Input Capacitance | Clss | VDS=-20V,VGS=0V, f=1.0MHz | 930 | pF | ||
| Output Capacitance | Coss | 85 | pF | |||
| Reverse Transfer Capacitance | Crss | 35 | pF | |||
| Switching Characteristics (Note 3) | ||||||
| Turn-on Delay Time | td(on) | VDD=-20V, RL=-1Ω, VGS=-10V,RGEN=3Ω | 8 | ns | ||
| Turn-on Rise Time | tr | 4 | ns | |||
| Turn-Off Delay Time | td(off) | 32 | ns | |||
| Turn-Off Fall Time | tf | 7 | ns | |||
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=-20V,ID=-15A, VGS=-10V | 25 | nC | ||
| Gate-Source Charge | Qgs | 3 | nC | |||
| Gate-Drain Charge | Qg d | 7 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-15A | -1.2 | V | ||
Ordering Information
| Ordering Codes | Package | Product Code | Packing |
|---|---|---|---|
| MDT20P04D | TO-252 | MDT20P04D | Reel |
2410122012_Minos-MDT20P04D_C19272219.pdf
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