Complementary mosfet pair MICROCHIP TC6320TG G designed for operation in high voltage pulser circuits
Key Attributes
Model Number:
TC6320TG-G
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
110pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
-
Mfr. Part #:
TC6320TG-G
Package:
SOIC-8
Product Description
Product Overview
The TC6320 is a high-voltage, low-threshold N-channel and P-channel MOSFET pair designed for high-voltage pulser applications. It features integrated gate-to-source resistors and Zener diode clamps, offering a complimentary, high-speed, high-voltage solution. Utilizing an advanced vertical DMOS structure, it provides the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and secondary breakdown, making it ideal for switching and amplifying applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds.
Product Attributes
- Brand: Microchip Technology Inc.
- Origin: Derived from Supertex Doc# DSFP-TC6320
- Package Types: 8-lead SOIC, 5-lead DFN
Technical Specifications
| Parameter | Symbol | N-Channel Min. | N-Channel Typ. | N-Channel Max. | N-Channel Unit | N-Channel Conditions | P-Channel Min. | P-Channel Typ. | P-Channel Max. | P-Channel Unit | P-Channel Conditions |
| Drain-to-source Breakdown Voltage | BVDSS | 200 | V | VGS = 0V, ID = 2 mA | 200 | V | VGS = 0V, ID = 2 mA | ||||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | V | VGS = VDS, ID = 1 mA | 1 | 2.4 | V | VGS = VDS, ID = 1 mA | ||
| Gate-to-source Shunt Resistor | RGS | 10 | 50 | k | IGS = 100 A | 10 | 50 | k | IGS = 100 A | ||
| Gate-to-Source Zener Voltage | VZGS | 13.2 | 25 | V | IGS = 2 mA | 13.2 | 25 | V | IGS = 2 mA | ||
| Zero-gate Voltage Drain Current | IDSS | 10 | A | VDS = Maximum rating, VGS = 0V | 10 | A | VDS = Maximum rating, VGS = 0V | ||||
| On-state Drain Current | ID(ON) | 1 | A | VGS = 4.5V, VDS = 25V | 1 | A | VGS = 4.5V, VDS = 25V | ||||
| Static Drain-to-source On-state Resistance | RDS(ON) | 8 | VGS = 4.5V, ID = 150 mA | 10 | VGS = 4.5V, ID = 150 mA | ||||||
| Forward Transconductance | GFS | 400 | mmho | VDS = 25V, ID = 500 mA | 400 | mmho | VDS = 25V, ID = 500 mA | ||||
| Input Capacitance | CISS | 110 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | 200 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||||
| Common Source Output Capacitance | COSS | 60 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | 55 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||||
| Reverse Transfer Capacitance | CRSS | 23 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | 30 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||||
| Turn-on Delay Time | td(ON) | 10 | ns | VDD = 25V, ID = 1A, RGEN = 25 | 10 | ns | VDD = 25V, ID = 1A, RGEN = 25 | ||||
| Rise Time | tr | 15 | ns | VDD = 25V, ID = 1A, RGEN = 25 | 15 | ns | VDD = 25V, ID = 1A, RGEN = 25 | ||||
| Turn-off Delay Time | td(OFF) | 20 | ns | VDD = 25V, ID = 1A, RGEN = 25 | 20 | ns | VDD = 25V, ID = 1A, RGEN = 25 | ||||
| Fall Time | tf | 15 | ns | VDD = 25V, ID = 1A, RGEN = 25 | 15 | ns | VDD = 25V, ID = 1A, RGEN = 25 | ||||
| Diode Forward Voltage Drop | VSD | 1.8 | V | VGS = 0V, ISD = 500 mA | 1.8 | V | VGS = 0V, ISD = 500 mA | ||||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = 500 mA | 300 | ns | VGS = 0V, ISD = 500 mA | ||||
| Operating Ambient Temperature | TA | 55 | +150 | C | 55 | +150 | C | ||||
| Storage Temperature | TS | 55 | +150 | C | 55 | +150 | C | ||||
| Package Thermal Resistance (8-lead DFN) | JA | 44 | C/W | Note 1 | 44 | C/W | Note 1 | ||||
| Package Thermal Resistance (8-lead SOIC) | JA | 101 | C/W | Note 1 | 101 | C/W | Note 1 |
2410121718_MICROCHIP-TC6320TG-G_C624992.pdf
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