Super Junction MOSFET Minos MLS60R380D for High Speed Switching and General Purpose Power Electronics
Key Attributes
Model Number:
MLS60R380D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-
RDS(on):
330mΩ@10V,3.8A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
25pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
770pF@25V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
21.8nC@10V
Mfr. Part #:
MLS60R380D
Package:
TO-252
Product Description
Product Overview
The MLS60R380D is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design minimizes conduction losses and enhances switching performance, making it ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS-KX
- Package: TO-252
- Certifications: 100% avalanche tested
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VDSS | Drain-to-Source Breakdown Voltage | 600 | V | |||
| ID | Drain Current (continuous) at TC=25 | 11 | A | |||
| IDM | Drain Current (pulsed) | 33 | A | |||
| VGS | Gate to Source Voltage | ±20 | V | |||
| Ptot | Total Dissipation at TC=25 | 31 | W | |||
| Tj Max. | Operating Junction Temperature | 150 | ||||
| Eas | Single Pulse Avalanche Energy | 250 | mJ | |||
| VDS | Drain-source Voltage | VGS=0V, ID=250µA | 600 | V | ||
| RDS(on) | Static Drain-to-Source on-Resistance | VGS=10V,ID=3.8A | 0.33 | 0.38 | mΩ | |
| VGS=10V | 0.33 | mΩ | ||||
| VGS(th) | Gated Threshold Voltage | VDS=VGS, D=250µA | 2 | 4 | V | |
| IDSS | Drain-Source Leakage Current | VDS=650V, VGS= 0V | 1.0 | µA | ||
| IGSS(F) | Gate-Source Forward Leakage | VGS= +30V | 100 | nA | ||
| IGSS(R) | Gate-Source Reverse Leakage | VGS= -30V | -100 | nA | ||
| Ciss | Input Capacitance | VGS = 0V VDS = 25Vf = 1.0MHz | 770 | pF | ||
| Coss | Output Capacitance | 560 | pF | |||
| Crss | Reverse Transfer Capacitance | 25 | pF | |||
| Qg | Total Gate Charge | ID =4.8A VDD =520V VGS = 10V | 21.8 | nC | ||
| Qgs | Gate-Source Charge | 4.5 | nC | |||
| Qgd | Gate-Drain Charge | 8 | nC | |||
| td(on) | Turn-on Delay Time | ID =4.8A VDD =400V VGS =10V RRG=5Ω | 11 | nS | ||
| tr | Turn-on Rise Time | 9 | nS | |||
| td(off) | Turn-off Delay Time | 38 | nS | |||
| tf | Turn-off Fall Time | 8 | nS | |||
| IS | Continuous Source Current (Body Diode) TC=25 °C | -- | -- | 11 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | -- | -- | 33 | A | |
| VSD | Diode Forward Voltage | IS=4.8A, VGS=0V(Note4) | -- | -- | 0.9 | V |
| trr | Reverse Recovery Time | IS=4.8A, Tj = 25°C dIF/dt=100A/us, VGS=0V | -- | 285 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 3135 | -- | nC | |
| Irrm | Reverse Recovery Current | -- | 22 | -- | A |
2410122023_Minos-MLS60R380D_C19272228.pdf
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