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quality Compact SOT363 Package Featuring Nexperia PUMD20 115 NPN PNP Resistor Equipped Double Transistor RET factory
quality Compact SOT363 Package Featuring Nexperia PUMD20 115 NPN PNP Resistor Equipped Double Transistor RET factory

Compact SOT363 Package Featuring Nexperia PUMD20 115 NPN PNP Resistor Equipped Double Transistor RET

Key Attributes
Model Number: PUMD20,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
2.2kΩ
Resistor Ratio:
1.2
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD20,115
Package:
TSSOP-6(SOT-363)
Product Description

Product Overview

The Nexperia PUMD2 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a single, compact SOT363 (SC-88) SMD plastic package. This device integrates built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. It is designed for low-current peripheral driving, controlling IC inputs, and as a replacement for general-purpose transistors in digital applications. The PUMD2 offers a 100 mA output current capability and a 50 V collector-emitter voltage rating.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT363 (SC-88)
  • Configuration: NPN/PNP Resistor-Equipped Double Transistor (RET)
  • Complementary Products: PUMH1 (NPN/NPN), PUMB1 (PNP/PNP)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage Open base [1] - - 50 V
IO Output current [1] - - 100 mA
R1 Bias resistor 1 (input) [2] 15.4 22 28.6 k
R2/R1 Bias resistor ratio [2] 0.8 1 1.2
VCBO Collector-base voltage Open emitter [1] - - 50 V
VEBO Emitter-base voltage Open collector [1] - - 10 V
VI Input voltage TR1 (NPN) -10 - 40 V
VI Input voltage TR2 (PNP) -40 - 10 V
Ptot Total power dissipation Tamb 25 C [2] - - 200 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -55 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient In free air [1] - - 625 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C [1] 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C [1] 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C [1] - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C [1] - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C [1] - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 mA; Tamb = 25 C [1] - - 180 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C [1] 60 - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C [1] - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C [1] - 1.1 0.8 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 5 mA; Tamb = 25 C 2.5 1.7 - V
Cc Collector capacitance TR1 (NPN): VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency TR1 (NPN): VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [3] - 230 - MHz
Cc Collector capacitance TR2 (PNP): VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 3 pF
fT Transition frequency TR2 (PNP): VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C [3] - 180 - MHz
Per device
Ptot Total power dissipation Tamb 25 C [2] - - 300 mW
Rth(j-a) Thermal resistance junction to ambient In free air [1] - - 417 K/W
Package Dimensions
Body 2.1 mm x 1.25 mm x 0.95 mm
Pitch 0.65 mm

[1] For the PNP transistor with negative polarity.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.

[3] Characteristics of built-in transistor.


2504101957_Nexperia-PUMD20-115_C553515.pdf

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