PNP Resistor Equipped Transistor Nexperia PDTA143XT215 with 50 Volt Collector Emitter Voltage Rating

Key Attributes
Model Number: PDTA143XT,215
Product Custom Attributes
Input Resistor:
4.7kΩ
Resistor Ratio:
2.1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA143XT,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTA143X series is a family of PNP resistor-equipped transistors (RET) designed for surface-mounted device (SMD) applications. These transistors feature built-in bias resistors, reducing component count and simplifying circuit design. They offer a 100 mA output current capability and are AEC-Q101 qualified, making them suitable for digital applications in automotive and industrial segments. This series serves as a cost-saving alternative to BC847/857 series in digital applications, ideal for controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Type: PNP Resistor-Equipped Transistor (RET)
  • Technology: Surface-Mounted Device (SMD)
  • Qualification: AEC-Q101

Technical Specifications

Type Number Package NPN Complement Package Configuration JEITA JEDEC Output Current (IO) R1 Bias Resistor (R1) R2/R1 Bias Resistor Ratio Collector-Emitter Voltage (VCEO)
PDTA143XE SOT416 PDTC143XE ultra small SC-75 - -100 mA 3.3 k (Typ) 1.7 (Min) -50 V
PDTA143XM SOT883 PDTC143XM leadless ultra small SC-101 - -100 mA 4.7 k (Typ) 2.1 (Typ) -50 V
PDTA143XT SOT23 PDTC143XT small - TO-236AB -100 mA 4.7 k (Nominal) 2.6 (Max) -50 V
PDTA143XU SOT323 PDTC143XU very small SC-70 - -100 mA 6.1 k (Max) - -50 V

Applications

  • Digital applications in automotive and industrial segments
  • Control of IC inputs
  • Switching loads

Pinning Information

Package Type Pin 1 Pin 2 Pin 3
SOT23; SOT323; SOT416 input (base) GND (emitter) output (collector)
SOT883 input (base) GND (emitter) output (collector)

Marking Codes

Type Number Marking Code
PDTA143XE 35
PDTA143XM DN
PDTA143XT *31
PDTA143XU *46

Limiting Values

Symbol Parameter Conditions Min Max Unit
VCBO Collector-base voltage open emitter - -50 V
VCEO Collector-emitter voltage open base - -50 V
VEBO Emitter-base voltage open collector - -7 V
VI Input voltage positive - +7 V
VI Input voltage negative - -20 V
IO Output current - - -100 mA
ICM Peak collector current single pulse; tp 1 ms - -100 mA
Ptot Total power dissipation Tamb 25 C, PDTA143XE (SOT416) - 150 mW
Ptot Total power dissipation Tamb 25 C, PDTA143XM (SOT883) - 250 mW
Ptot Total power dissipation Tamb 25 C, PDTA143XT (SOT23) - 250 mW
Ptot Total power dissipation Tamb 25 C, PDTA143XU (SOT323) - 200 mW
Tj Junction temperature - - 150 C
Tamb Ambient temperature - -65 +150 C
Tstg Storage temperature - -65 +150 C

Thermal Characteristics

Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) Thermal resistance from junction to ambient PDTA143XE (SOT416) - - 830 K/W
Rth(j-a) Thermal resistance from junction to ambient PDTA143XM (SOT883) - - 500 K/W
Rth(j-a) Thermal resistance from junction to ambient PDTA143XT (SOT23) - - 500 K/W
Rth(j-a) Thermal resistance from junction to ambient PDTA143XU (SOT323) - - 625 K/W

Characteristics

Symbol Parameter Conditions Min Typ Max Unit
ICBO Collector-base cut-off current VCB = -50 V; IE = 0 A - - -100 nA
ICEO Collector-emitter cut-off current VCE = -30 V; IB = 0 A - - -1 A
ICEO Collector-emitter cut-off current VCE = -30 V; IB = 0 A; Tj = 150 C - - -5 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A - - -600 A
hFE DC current gain VCE = -5 V; IC = -10 mA 50 - - -
VCEsat Collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA - - -100 mV
VI(off) Off-state input voltage VCE = -5 V; IC = -100 A - -0.9 -0.3 V
VI(on) On-state input voltage VCE = -0.3 V; IC = -20 mA -2.5 -1.5 - V
R1 Bias resistor 1 (input) - 3.3 4.7 6.1 k
R2/R1 Bias resistor ratio - 1.7 2.1 2.6 -
Cc Collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - - 3 pF
fT Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz - 180 - MHz

Quality Information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

Package Outline

Refer to figures for detailed package dimensions:

  • PDTA143XE (SOT416/SC-75)
  • PDTA143XM (SOT883/SC-101)
  • PDTA143XT (SOT23)
  • PDTA143XU (SOT323/SC-70)

Packing Information

Type Number Package Description Packing Quantity
PDTA143XE SOT416 4 mm pitch, 8 mm tape and reel 3000, 10000
PDTA143XM SOT883 2 mm pitch, 8 mm tape and reel 5000
PDTA143XT SOT23 4 mm pitch, 8 mm tape and reel 3000, 10000
PDTA143XU SOT323 4 mm pitch, 8 mm tape and reel 3000, 10000

Soldering

Reflow soldering is the only recommended soldering method.


2410121742_Nexperia-PDTA143XT-215_C552098.pdf

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