N channel Enhanced Power MOSFET Minos MPT045N08P with low on resistance and high avalanche ruggedness

Key Attributes
Model Number: MPT045N08P
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
138A
RDS(on):
4.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Output Capacitance(Coss):
637pF
Pd - Power Dissipation:
173.6W
Input Capacitance(Ciss):
4.021nF
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
MPT045N08P
Package:
TO-220
Product Description

Product Description

The MPT045N08P is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal device for motor drivers and high-speed switching applications, offering low on-resistance, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. It is also a RoHS product.

Product Attributes

  • Brand: MNS (implied from www.mns-kx.com)
  • Certifications: RoHS

Technical Specifications

Ordering CodePackageProduct CodePackingVDS (V)RDS(on) @VGS=10V (m)ID (A)VGS (V)PD (W)TJ, Tstg (C)RJC (C/W)RJA (C/W)
MPT045N08-PTO-220MPT045N08PTube85<5 (Typ:4.4)13820173.6-55 to 1500.5562.5
MPT045N08-STO-263MPT045N08STape Reel85<5 (Typ:4.4)13820173.6-55 to 1500.5562.5

2509171410_Minos-MPT045N08P_C51933924.pdf

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