Nexperia PUMD3 165 NPN PNP Resistor Equipped Double Transistor Ideal for Automotive Digital Load Control
Key Attributes
Model Number:
PUMD3,165
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD3,165
Package:
TSSOP-6(SOT-363)
Product Description
Product Overview
The Nexperia PUMD3 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a compact SOT363 (SC-88) SMD plastic package. It offers a 100 mA output current capability and incorporates built-in bias resistors, which simplify circuit design, reduce component count, and lower pick-and-place costs. This device is suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative to BC847/BC857 series in digital applications, for controlling IC inputs, and for switching loads.
Product Attributes
- Brand: Nexperia
- Package Type: SOT363 (SC-88)
- Configuration: NPN/PNP Resistor-Equipped Double Transistor (RET)
- Complementary NPN/NPN: PUMH11
- Complementary PNP/PNP: PUMB11
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor, for the PNP transistor with negative polarity | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | - |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 10 | V |
| VI | Input voltage TR1 | - | - | - | -10 | V |
| VI | Input voltage TR2 | - | - | - | -40 | V |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 200 | mW |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 300 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Thermal characteristics | ||||||
| Per transistor | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient in free air | [1] | - | - | 625 | K/W |
| Per device | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient in free air | [1] | - | - | 417 | K/W |
| Characteristics | ||||||
| Per transistor, for the PNP transistor with negative polarity | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 C | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 mA; Tamb = 25 C | - | - | 400 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA; Tamb = 25 C | 30 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | - | 100 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | - | 1.1 | 0.8 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 10 mA; Tamb = 25 C | 2.5 | 1.8 | - | V |
| R1 | Bias resistor 1 (input) | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | - |
| TR1 (NPN) | ||||||
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] | - | 230 | - | MHz |
| TR2 (PNP) | ||||||
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C [2] | - | 180 | - | MHz |
| [1] See "Section 11: Test information" for resistor calculation and test conditions. | ||||||
| [2] Characteristics of built-in transistor | ||||||
| Ordering information | ||||||
| Package Type | Number | Name | Description | Version | - | - |
| TSSOP6 | PUMD3 | SOT363 | Plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body | - | - | - |
| Marking | ||||||
| Type number | Marking code[1] | - | - | - | - | - |
| PUMD3 | D%3 | - | - | - | - | - |
| [1] % = placeholder for manufacturing site code | ||||||
| Package outline | ||||||
| Package | Dimensions (mm) | - | - | - | - | - |
| TSSOP6 (SOT363) | 2.1 x 1.25 x 0.95 | - | - | - | - | - |
2409302134_Nexperia-PUMD3-165_C553519.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
