N Channel MOSFET MEM2306SG featuring DMOS trench technology and dissipation for power management

Key Attributes
Model Number: MEM2306SG
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-
RDS(on):
25mΩ@3.85V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
2 N-Channel
Output Capacitance(Coss):
630pF
Input Capacitance(Ciss):
1.5nF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
60nC@4.5V
Mfr. Part #:
MEM2306SG
Package:
SOP-8
Product Description

N-Channel MOSFET MEM2306

The MEM2306 is a dual N-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology. It is designed to minimize on-state resistance, making it suitable for low voltage applications and low power dissipation. Key advantages include ultra-low on-resistance and a surface mount SOP8 package. This device is ideal for battery management, power management, portable equipment, low power DC to DC converters, load switches, and LCD adapters.

Product Attributes

  • Brand: Microne
  • Origin: www.microne.com.cn
  • Material: DMOS trench technology
  • Package: SOP8

Technical Specifications

ParameterSymbolTest ConditionMinTypeMaxUnit
Static CharacteristicsV(BR)DSSVGS=0V, ID=250A2023V
VGS(th)VDS= VGS, ID=250A0.50.721V
IDSSVDS=16V VGS=0V1.81000nA
RDS(ON)VGS=4.5V,ID=6A23m
RDS(ON)VGS=3.85V,ID=5A25m
RDS(ON)VGS=2.5V,ID=4A35m
Dynamic CharacteristicsCissVDS = 8 V, VGS = 0 V, f = 1 MHz11201500pF
Coss480630pF
Crss110160pF
Switching Characteristicstd(on)VDD = 10 V, RL = 10 ID =1 A, VGEN = 4.5 V, Rg = 6 2560ns
tr60140
td(off)60140
tf5060
Total Gate ChargeQgVDS = 10 V, VGS = 4.5 V, ID = 6 A4760nc
Gate-Source ChargeQgs6
Gate-Drain ChargeQg8

2411121056_MICRONE-MEM2306SG_C236638.pdf

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