N Channel MOSFET MEM2306SG featuring DMOS trench technology and dissipation for power management
N-Channel MOSFET MEM2306
The MEM2306 is a dual N-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology. It is designed to minimize on-state resistance, making it suitable for low voltage applications and low power dissipation. Key advantages include ultra-low on-resistance and a surface mount SOP8 package. This device is ideal for battery management, power management, portable equipment, low power DC to DC converters, load switches, and LCD adapters.
Product Attributes
- Brand: Microne
- Origin: www.microne.com.cn
- Material: DMOS trench technology
- Package: SOP8
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Static Characteristics | V(BR)DSS | VGS=0V, ID=250A | 20 | 23 | V | |
| VGS(th) | VDS= VGS, ID=250A | 0.5 | 0.72 | 1 | V | |
| IDSS | VDS=16V VGS=0V | 1.8 | 1000 | nA | ||
| RDS(ON) | VGS=4.5V,ID=6A | 23 | m | |||
| RDS(ON) | VGS=3.85V,ID=5A | 25 | m | |||
| RDS(ON) | VGS=2.5V,ID=4A | 35 | m | |||
| Dynamic Characteristics | Ciss | VDS = 8 V, VGS = 0 V, f = 1 MHz | 1120 | 1500 | pF | |
| Coss | 480 | 630 | pF | |||
| Crss | 110 | 160 | pF | |||
| Switching Characteristics | td(on) | VDD = 10 V, RL = 10 ID =1 A, VGEN = 4.5 V, Rg = 6 | 25 | 60 | ns | |
| tr | 60 | 140 | ||||
| td(off) | 60 | 140 | ||||
| tf | 50 | 60 | ||||
| Total Gate Charge | Qg | VDS = 10 V, VGS = 4.5 V, ID = 6 A | 47 | 60 | nc | |
| Gate-Source Charge | Qgs | 6 | ||||
| Gate-Drain Charge | Qg | 8 |
2411121056_MICRONE-MEM2306SG_C236638.pdf
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