High Speed Switching Silicon MOSFET Minos MPF40N25 with RoHS Certification and Enhanced Performance
Key Attributes
Model Number:
MPF40N25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
65mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
2.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.7nF@25V
Pd - Power Dissipation:
310W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
MPF40N25
Package:
TO-220F
Product Description
Product Overview
The MPF40N25 is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology. This technology minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal device for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos (implied from contact information)
- Material: Silicon
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | Conditions | Notes |
| KEY CHARACTERISTICS | ||||
| VDS | 250 | V | ||
| ID | 40 | A | ||
| RDS(ON).Typ | 0.065 | |||
| FEATURES | ||||
| Fast Switching Low Crss 100% avalanche tested Improved dv/dt capability RoHS product | ||||
| APPLICATIONS | ||||
| High frequency switching mode power supply | ||||
| ORDERING INFORMATION | ||||
| Ordering Codes | Package | Product Code | Packing | |
| TO-220F | MPF40N25 | Tube | ||
| ABSOLUTE RATINGS | ||||
| Parameter | Rating | Units | TC = 25C, unless otherwise specified | |
| VDSS | 250 | V | ||
| ID | 40 | A | Continuous Drain Current | |
| ID | 26 | A | Continuous Drain Current TC = 100 C | |
| IDM | 160 | A | Pulsed Drain Current | (Note1) |
| VGS | 30 | V | ||
| EAS | 2000 | mJ | Single Pulse Avalanche Energy | (Note2) |
| dv/dt | 5.0 | V/ns | Peak Diode Recovery dv/dt | (Note3) |
| PD | 310 | W | Power Dissipation | |
| Derating Factor above 25C | 2.78 | W/ | ||
| TJ, Tstg | 55 to 150 | Operating Junction and Storage Temperature Range | ||
| TL | 300 | Maximum Temperature for Soldering | ||
| Thermal characteristics | ||||
| Symbol | Parameter | RATINGS | Units | TO-220F |
| RJC | Junction-to-Case | 0.36 | /W | |
| RJA | Junction-to-Ambient | 62.5 | /W | |
| Electrical Characteristics | ||||
| Symbol | Parameter | Test Conditions | Values (Min. Typ. Max.) | Units |
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 250 -- -- | V |
| BVDSS/ TJ | Bvdss Temperature Coefficient | ID=250uA, Reference25 | -- 0.18 -- | V/ |
| IDSS | Drain to Source Leakage Current | VDS =250V, VGS= 0V, Tj = 25 | -- -- 1 | A |
| IDSS | Drain to Source Leakage Current | VDS =200V, VGS= 0V, Tj= 125 | -- -- 10 | A |
| IGSS(F) | Gate to Source Forward Leakage | VGS =+30V | -- -- 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS =-30V | -- -- -100 | nA |
| ON Characteristics | ||||
| RDS(ON) | Drain-to-Source On- Resistance | VGS=10V, ID=20A(Note4) | -- 0.065 0.08 | |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID= 250A(Note4) | 2.0 -- 4.0 | V |
| gfs | Forward Transconductance | VDS=40V, ID=20A(Note4) | -- 27 -- | S |
| Dynamic Characteristics | ||||
| Rg | Gate resistance | f = 1.0MHz | -- 1.8 -- | |
| Ciss | Input Capacitance | VGS = 0V VDS = 25V f = 1.0MHz | -- 3700 -- | PF |
| Coss | Output Capacitance | -- 360 -- | PF | |
| Crss | Reverse Transfer Capacitance | -- 2.5 -- | PF | |
| Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | ID=40A VDD= 125V VGS= 10V RG =15 | -- 80 -- | ns |
| tr | Rise Time | -- 620 -- | ns | |
| td(OFF) | Turn-Off Delay Time | -- 140 -- | ns | |
| tf | Fall Time | -- 183 -- | ns | |
| Qg | Total Gate Charge | ID=40A VDD=200V VGS = 10V | -- 40 -- | nC |
| Qgs | Gate to Source Charge | -- 14 -- | nC | |
| Qgd | Gate to Drain (Miller)Charge | -- 11 -- | nC | |
| Source-Drain Diode Characteristics | ||||
| IS | Continuous Source Current (Body Diode) | TC=25 C | -- -- 40 | A |
| ISM | Maximum Pulsed Current (Body Diode) | -- -- 160 | A | |
| VSD | Diode Forward Voltage | IS=40A, VGS=0V(Note4) | -- -- 1.2 | V |
| Trr | Reverse Recovery Time | IS=40A, Tj = 25C dIF/dt=100A/us, | -- 230 -- | ns |
| Qrr | Reverse Recovery Charge | -- 2150 -- | nC | |
| Notes | ||||
| Note1: Pulse width limited by maximum junction temperature | ||||
| Note2: L=10mH, VDs=50V, Start TJ=25 | ||||
| Note3: ISD =40A,di/dt 100A/us,VDDBVDS, Start TJ=25 | ||||
| Note4: Pulse width tp300s, 2% | ||||
| TO-220F Package Dimensions | ||||
| Items | Values(mm) | MIN | MAX | |
| A | 9.60 | 10.4 | ||
| B | 15.4 | 16.2 | ||
| B1 | 8.90 | 9.50 | ||
| C | 4.30 | 4.90 | ||
| C1 | 2.10 | 3.00 | ||
| D | 2.40 | 3.00 | ||
| E | 0.60 | 1.00 | ||
| F | 0.30 | 0.60 | ||
| G | 1.12 | 1.42 | ||
| H | 3.40 | 3.80 | ||
| I | 1.60 | 2.90 | ||
| L | 12.0 | 14.0 | ||
| N | 2.34 | 2.74 | ||
| Q | 3.15 | 3.55 | ||
2411220027_Minos-MPF40N25_C6719391.pdf
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