Nexperia PUMD12 135 compact transistor in SOT363 package for control of IC inputs and digital circuits
Key Attributes
Model Number:
PUMD12,135
Product Custom Attributes
Input Resistor:
61kΩ
Resistor Ratio:
1.2
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD12,135
Package:
TSSOP-6
Product Description
Product Overview
Nexperia's PEMD12 and PUMD12 are NPN/PNP double Resistor-Equipped Transistors (RET) in compact Surface-Mounted Device (SMD) plastic packages. These devices are designed to reduce component count, lower pick-and-place costs, and simplify circuit design by integrating built-in bias resistors (R1 = 47 k, R2 = 47 k). They offer a 100 mA output current capability and are AEC-Q101 qualified, making them suitable for low current peripheral driving, control of IC inputs, and as replacements for general-purpose transistors in digital applications.
Product Attributes
- Brand: Nexperia
- Certifications: AEC-Q101 qualified
- Package Types: SOT666 (PEMD12), SOT363 (PUMD12)
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor; for the PNP transistor (TR2) with negative polarity | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | - | 33 | 47 | 61 | k |
| R2/R1 | Bias resistor ratio | - | 0.8 | 1 | 1.2 | - |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 10 | V |
| VI (TR1 positive) | Input voltage | - | - | - | +40 | V |
| VI (TR1 negative) | Input voltage | - | -10 | - | - | V |
| VI (TR2 positive) | Input voltage | - | - | - | +10 | V |
| VI (TR2 negative) | Input voltage | - | -40 | - | - | V |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 100 | mA |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C (PEMD12 SOT666) | - | - | 200 | mW |
| Ptot | Total power dissipation | Tamb 25 C (PUMD12 SOT363) | - | - | 200 | mW |
| Ptot | Total power dissipation | Tamb 25 C (PEMD12 SOT666) | - | - | 300 | mW |
| Ptot | Total power dissipation | Tamb 25 C (PUMD12 SOT363) | - | - | 300 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | +150 | C |
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| Thermal characteristics (Per device) | ||||||
| Rth(j-a) | Thermal resistance junction to ambient | Free air (PEMD12 SOT666) | - | - | 625 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | Free air (PUMD12 SOT363) | - | - | 625 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | Free air (PEMD12 SOT666) | - | - | 417 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | Free air (PUMD12 SOT363) | - | - | 417 | K/W |
| Characteristics (Tamb = 25 C unless otherwise specified) | ||||||
| Per transistor; for the PNP transistor (TR2) with negative polarity | ||||||
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 1 | A |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 90 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA | 80 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | - | 1.2 | 0.8 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 2 mA | 3 | 1.6 | - | V |
| R1 | Bias resistor 1 (input) | - | 33 | 47 | 61 | k |
| R2/R1 | Bias resistor ratio | - | 0.8 | 1 | 1.2 | - |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz (TR1 NPN) | - | - | 2.5 | pF |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz (TR2 PNP) | - | - | 3 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz (TR1 NPN) | - | 230 | - | MHz |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz (TR2 PNP) | - | 180 | - | MHz |
Applications
- Low current peripheral driver
- Control of IC inputs
- Replacement for general-purpose transistors in digital applications
Ordering Information
| Type number | Package Name | Description | Version |
|---|---|---|---|
| PEMD12 | SOT666 | Plastic surface-mounted package; 6 leads | - |
| PUMD12 | SC-88 | Plastic surface-mounted package; 6 leads | SOT363 |
Marking Codes
| Type number | Marking code[1] |
|---|---|
| PEMD12 | D2 |
| PUMD12 | D*1 |
[1] * = placeholder for manufacturing site code
2410121742_Nexperia-PUMD12-135_C5341191.pdf
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