Power Amplifier Transistor Minos 2SA1941 PNP Silicon Epitaxial Type for Audio Frequency Applications

Key Attributes
Model Number: 2SA1941
Product Custom Attributes
Current - Collector Cutoff:
5uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
100W
Transition Frequency(fT):
30MHz
Type:
PNP
Current - Collector(Ic):
10A
Collector - Emitter Voltage VCEO:
140V
Operating Temperature:
-
Mfr. Part #:
2SA1941
Package:
TO-3PS
Product Description

Product Overview

The 2SA1941 is a Minos Silicon PNP Epitaxial Type transistor designed for Power Amplifier Applications. It serves as a complementary component to the 2SC5198 and is recommended for 100-W high-fidelity audio frequency amplifier output stages due to its high collector voltage of -140V (min). Continuous operation under heavy loads, such as high temperature, current, or voltage, or significant temperature changes, may significantly decrease product reliability, even if operating conditions remain within absolute maximum ratings.

Product Attributes

  • Brand: MINOS
  • Origin: SHENZHEN MINOS TECHNOLOGY CO.,LTD
  • Type: PNP Epitaxial Type
  • Material: Silicon

Technical Specifications

Absolute Maximum Ratings (Tc=25)

Characteristics Symbol Rating Unit
Collector-base voltage VCBO -140 V
Collector-emitter voltage VCEO -140 V
Emitter-base voltage VEBO -5 V
Collector current IC -10 A
Base current IB -1 A
Collector power dissipation (Tc=25) PC 100 W
Junction temperature Tj 150
Storage temperature range TSTG -55~150

Electrical Characteristics (Tc=25)

Characteristics Symbol Test Condition Min Typ Max Unit
Collector cut-off current ICBO VCB=-140V; IE=0 -5.0 uA
Emitter cut-off current IEBO VEB=-5V; Ic=0 -5.0 uA
Collector-emitter breakdown voltage V(BR)CEO IC=-50mA;IB=0 -140 V
DC current gain hFE IC=-1A; VCE=-5V 55 160
IC=-5A; VCE=-5V 35 83
Collector-emitter saturation voltage VCE(sat) IC=-8A; IB=-0.8A -0.8 -2.5 V
Base-emitter voltage VBE VCE=-5V;IC=-5A -1.0 -1.5 V
Transition frequency fT VCE=-5V;IC=-1A 30 MHz

Typical Characteristics

Symbol Parameter Typ Units
RJC Junction-to-Case 0.35 /W

Package Information

Symbol Unit Min Nom Max
A mm 4.30 4.50 4.70
A1 mm 1.3 1.5 1.7
A2 mm 2.50 2.70 2.90
b mm 0.80 1.0 1.20
b1 mm 1.80 2.00 2.20
c mm 0.50 0.60 0.70
e mm 5.25 5.45 5.65
E mm 15.1 15.5 15.9
E1 mm 13.1 13.3 13.5
E2 mm 13.2 13.4 13.6
E3 mm 9.1 9.3 9.5
H mm 19.8 20.0 20.2
H1 mm 20.0 20.5 21.0
H2 mm 18.3 18.5 18.7
H3 mm 2.8 3.0 3.2
G mm 4.30 4.50 4.70
P mm 3.00 3.20 3.40

Package Type: TO-3PS

Headquarters: SHENZHEN MINOS TECHNOLOGY CO.,LTD
22B, Floor 22, Chengshitianmian Building, No. 4026 of Shennanzhong Road, Futian District, Shenzhen
Tel: +86-0755-83273777
Fax: +86-0755-83224033

Website: www.mns-kx.com


2410121541_Minos-2SA1941_C6719382.pdf

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