Nexperia PEMD12 115 transistor in sot666 package designed for control of IC inputs and automotive
Key Attributes
Model Number:
PEMD12,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
61kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PEMD12,115
Package:
SOT-666-6
Product Description
Product Overview
Nexperia's PEMD12 and PUMD12 are NPN/PNP double Resistor-Equipped Transistors (RET) in compact Surface-Mounted Device (SMD) plastic packages. These devices feature built-in bias resistors, reducing component count and simplifying circuit design, which in turn lowers pick-and-place costs. They are AEC-Q101 qualified, making them suitable for automotive applications. Key applications include low-current peripheral driving and control of IC inputs, effectively replacing general-purpose transistors in digital applications.
Product Attributes
- Brand: Nexperia (formerly NXP Standard Product business)
- Product Type: NPN/PNP double Resistor-Equipped Transistors (RET)
- Certifications: AEC-Q101 qualified
Technical Specifications
| Model | Package | PNP/PNP Complement | NPN/NPN Complement | Package Configuration | R1 Bias Resistor (Input) | R2/R1 Bias Resistor Ratio | Output Current (IO) | Collector-Emitter Voltage (VCEO) |
|---|---|---|---|---|---|---|---|---|
| PEMD12 | SOT666 (ultra small and flat lead) | PEMB2 | PEMH2 | JEITA | 33 k - 61 k (Typ: 47 k) | 0.8 - 1.2 (Typ: 1) | - 100 mA | - 50 V |
| PUMD12 | SOT363 (SC-88, very small) | PUMB2 | PUMH2 | JEITA | 33 k - 61 k (Typ: 47 k) | 0.8 - 1.2 (Typ: 1) | - 100 mA | - 50 V |
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Per transistor; for the PNP transistor (TR2) with negative polarity | |||||
| Collector-Base Voltage (VCBO) | Open emitter | - | - | 50 | V |
| Collector-Emitter Voltage (VCEO) | Open base | - | - | 50 | V |
| Emitter-Base Voltage (VEBO) | Open collector | - | - | 10 | V |
| Input Voltage (VI) TR1 positive | - | +40 | - | V | |
| Input Voltage (VI) TR1 negative | - | -10 | - | V | |
| Input Voltage (VI) TR2 positive | - | +10 | - | V | |
| Input Voltage (VI) TR2 negative | - | -40 | - | V | |
| Output Current (IO) | - | - | 100 | mA | |
| Peak Collector Current (ICM) | Single pulse; tp ≤ 1 ms | - | - | 100 | mA |
| Total Power Dissipation (Ptot) | |||||
| PEMD12 (SOT666) | Tamb ≤ 25 °C [1][2] | - | - | 200 | mW |
| PUMD12 (SOT363) | Tamb ≤ 25 °C [1] | - | - | 200 | mW |
| Per device Total Power Dissipation (Ptot) | |||||
| PEMD12 (SOT666) | Tamb ≤ 25 °C [1][2] | - | - | 300 | mW |
| PUMD12 (SOT363) | Tamb ≤ 25 °C [1] | - | - | 300 | mW |
| Junction Temperature (Tj) | - | - | 150 | °C | |
| Ambient Temperature (Tamb) | -65 | - | +150 | °C | |
| Storage Temperature (Tstg) | -65 | - | +150 | °C | |
| Thermal Characteristics (Per device) | |||||
| Thermal resistance junction to ambient (Rth(j-a)) | Free air; FR4 PCB, standard footprint [1][2] (PEMD12 SOT666) | - | - | 417 | K/W |
| Thermal resistance junction to ambient (Rth(j-a)) | Free air; FR4 PCB, standard footprint [1] (PUMD12 SOT363) | - | - | 417 | K/W |
| Characteristics (Tamb = 25 °C unless otherwise specified) | |||||
| Per transistor; for the PNP transistor (TR2) with negative polarity | |||||
| Collector-Base Cut-off Current (ICBO) | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| Collector-Emitter Cut-off Current (ICEO) | VCE = 30 V; IB = 0 A | - | - | 1 | µA |
| Collector-Emitter Cut-off Current (ICEO) | VCE = 30 V; IB = 0 A; Tj = 150 °C | - | - | 5 | µA |
| Emitter-Base Cut-off Current (IEBO) | VEB = 5 V; IC = 0 A | - | - | 90 | µA |
| DC Current Gain (hFE) | VCE = 5 V; IC = 5 mA | 80 | - | - | |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 10 mA; IB = 0.5 mA | - | - | 150 | mV |
| Off-State Input Voltage (VI(off)) | VCE = 5 V; IC = 100 µA | - | 0.8 | 1.2 | V |
| On-State Input Voltage (VI(on)) | VCE = 0.3 V; IC = 2 mA | 1.6 | 3 | - | V |
| Bias Resistor R1 (input) | 33 | 47 | 61 | kΩ | |
| Bias Resistor Ratio R2/R1 | 0.8 | 1 | 1.2 | ||
| Collector Capacitance (Cc) | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF (TR1 NPN) |
| Collector Capacitance (Cc) | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF (TR2 PNP) |
| Transition Frequency (fT) | VCE = 5 V; IC = 10 mA; f = 100 MHz [1] | - | 230 | - | MHz (TR1 NPN) |
| Transition Frequency (fT) | VCE = 5 V; IC = 10 mA; f = 100 MHz [1] | - | 180 | - | MHz (TR2 PNP) |
| Type Number | Package Name | Description | Version |
|---|---|---|---|
| PEMD12 | SOT666 | Plastic surface-mounted package; 6 leads | |
| PUMD12 | SOT363 | SC-88 plastic surface-mounted package; 6 leads |
| Type Number | Marking Code [1] |
|---|---|
| PEMD12 | D2 |
| PUMD12 | D*1 |
[1] * = placeholder for manufacturing site code
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
2410121742_Nexperia-PEMD12-115_C455063.pdf
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