Minos MPG08N68P Power MOSFET Featuring High Density Cell and Low RDS ON for Power Switching Solutions
Key Attributes
Model Number:
MPG08N68P
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
6.5mΩ@10V,45A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
180pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
3.2nF@30V
Pd - Power Dissipation:
125W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
MPG08N68P
Package:
TO-220
Product Description
Product Overview
The MPG08N68 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched, and high-frequency circuits, as well as uninterruptible power supplies. Its design emphasizes high ESD capability, high density cell for ultra-low Rdson, and fully characterized avalanche voltage and current for good stability and uniformity.
Product Attributes
- Brand: MNS (implied by www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
- Certifications: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit | TO-263 | TO-220 |
| Drain-Source Voltage | VDS | 68 | V | ✔ | ✔ | |||
| Gate-Source Voltage | VGS | ±20 | V | ✔ | ✔ | |||
| Drain Current-Continuous | ID | 100 | A | ✔ | ✔ | |||
| Drain Current-Pulsed | IDM | (Note 1) | 340 | A | ✔ | ✔ | ||
| Maximum Power Dissipation | PD | (Tc=25) | 125 | W | ✔ | ✔ | ||
| Single pulse avalanche energy | EAS | (Note 2) | 370 | mJ | ✔ | ✔ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ✔ | ✔ | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 68 | - | - | V | ✔ | ✔ |
| Zero Gate Voltage Drain Current | IDSS | VDS=68V,VGS=0V | - | - | 1 | A | ✔ | ✔ |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | ±100 | nA | ✔ | ✔ |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V | ✔ | ✔ |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=45A (Note 3) | - | 6.5 | 7.5 | m | ✔ | ✔ |
| Forward Transconductance | GFS | VDS=10V,ID=20A | - | 20 | - | S | ✔ | ✔ |
| Input Capacitance | Clss | VDS=30V,VGS=0V, F=1.0MHz | - | 3200 | - | pF | ✔ | ✔ |
| Output Capacitance | Coss | - | 440 | - | pF | ✔ | ✔ | |
| Reverse Transfer Capacitance | Crss | - | 180 | - | pF | ✔ | ✔ | |
| Turn-on Delay Time | td(on) | VDD=30V, ID=30A, VGS=10V,RGEN=6 (Note 4) | - | 16 | - | nS | ✔ | ✔ |
| Turn-on Rise Time | tr | - | 95 | - | nS | ✔ | ✔ | |
| Turn-Off Delay Time | td(off) | - | 47 | - | nS | ✔ | ✔ | |
| Turn-Off Fall Time | tf | - | 31 | - | nS | ✔ | ✔ | |
| Total Gate Charge | Qg | VDS=30V,ID=20A, VGS=10V | - | 40 | - | nC | ✔ | ✔ |
| Gate-Source Charge | Qgs | - | 11 | - | nC | ✔ | ✔ | |
| Gate-Drain Charge | Qg d | - | 15 | - | nC | ✔ | ✔ | |
| Diode Forward Voltage | VSD | VGS=0V,IS=90A (Note 3) | - | - | 1.2 | V | ✔ | ✔ |
| Thermal Resistance,Junction-to-Case | RJC | - | 1.2 | - | /W | ✔ | ✔ |
2410122013_Minos-MPG08N68P_C5452764.pdf
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