Silicon N Channel Power MOSFET Minos K3878 Featuring Low RDS ON Ideal for Adapters and Chargers
Key Attributes
Model Number:
K3878
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
9A
RDS(on):
970mΩ@10V,4.5A
Gate Threshold Voltage (Vgs(th)):
3.95V
Reverse Transfer Capacitance (Crss@Vds):
23pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.53nF@25V
Pd - Power Dissipation:
350W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
K3878
Package:
TO-3P
Product Description
Product Overview
The K3878 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of power switching applications, including adapters and chargers. Key advantages include low ON resistance, low reverse transfer capacitances, and a 100% single pulse avalanche energy test.
Product Attributes
- Brand: MNS
- Origin: Shenzhen, China (implied by contact information)
- Package: TO-3P
- Certifications: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Value | Unit | Conditions |
| Drain-to-Source Breakdown Voltage (VDSS) | 900 | V | VGS=0V, ID=250A |
| 900 | V | Limited Parameter | |
| Static Drain-to-Source on-Resistance (RDS(on)) | 0.97 | VGS=10V, ID=4.5A (Typ) | |
| 1.15 | VGS=10V, ID=4.5A (Max) | ||
| Gate Threshold Voltage (VGS(th)) | 3.0 - 5.0 | V | VDS=VGS,ID=250A |
| Drain Current (continuous) (ID) | 9 | A | Tc=25 |
| Drain Current (Pulsed) (IDM) | 36 | A | |
| Gate to Source Voltage (VGS) | 30 | V | |
| Total Dissipation (Ptot) | 350 | W | Tc=25 |
| Max. Operating Junction Temperature (Tj Max.) | 175 | ||
| Single Pulse Avalanche Energy (Eas) | 960 | mJ | |
| Drain to Source Leakage Current (IDSS) | 1.0 | A | VDS=900V, VGS= 0V |
| Gate to Source Forward Leakage (IGSS(F)) | 100 | nA | VGS= +30V |
| Gate to Source Reverse Leakage (IGSS(R)) | -100 | nA | VGS= -30V |
| Input Capacitance (Ciss) | 2530 | pF | VGS=0V, VDS=25V, f=1.0MHZ |
| Output Capacitance (Coss) | 215 | pF | VGS=0V, VDS=25V, f=1.0MHZ |
| Reverse Transfer Capacitance (Crss) | 23 | pF | VGS=0V, VDS=25V, f=1.0MHZ |
| Turn-on Delay Time (td(on)) | 60 | nS | VDD=450V,ID=9A, RG=25 |
| Turn-on Rise Time (tr) | 130 | nS | VDD=450V,ID=9A, RG=25 |
| Turn-off Delay Time (td(off)) | 130 | nS | VDD=450V,ID=9A, RG=25 |
| Turn-off Fall Time (tf) | 85 | nS | VDD=450V,ID=9A, RG=25 |
| Total Gate Charge (Qg) | 60 | nC | VDS=720V ID=9A VGS=10V |
| Gate-Source Charge (Qgs) | 13 | nC | VDS=720V ID=9A VGS=10V |
| Gate-Drain Charge (Qgd) | 25 | nC | VDS=720V ID=9A VGS=10V |
| S-D Current(Body Diode) (ISD) | 9 | A | |
| Pulsed S-D Current(Body Diode) (ISDM) | 36 | A | |
| Diode Forward Voltage (VSD) | 1.5 | V | VGS=0V, IDS=9A |
| Reverse Recovery Time (trr) | 1000 | nS | TJ=25,IS=9A di/dt=100A/us |
| Reverse Recovery Charge (Qrr) | 17.0 | C | TJ=25,IS=9A di/dt=100A/us |
| Junction-to-Case Thermal Resistance (RJC) | 0.42 | /W |
2410122013_Minos-K3878_C19189955.pdf
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