High Current Capacity Minos IRF1404 Power MOSFET with 40V Drain Source Voltage and Low On Resistance
Key Attributes
Model Number:
IRF1404
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
180A
RDS(on):
3.5mΩ@10V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
3.2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF@25V
Input Capacitance(Ciss):
3.315nF@0V
Pd - Power Dissipation:
200W
Gate Charge(Qg):
47nC
Mfr. Part #:
IRF1404
Package:
TO-220
Product Description
Product Overview
The IRF1404 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide variety of applications, including power switching and adapters/chargers. Key features include a VDS of 40V, ID of 180A, low ON resistance, and low reverse transfer capacitances. The device has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: MNS-KX (implied from URL)
- Origin: Shenzhen, China (implied from contact information)
- Material: Silicon
- Certifications: Not specified
Technical Specifications
| Parameter | Value | Unit | Conditions |
| Absolute Maximum Ratings | |||
| VDS | 40 | V | Drain-to-Source Breakdown Voltage |
| ID | 180 | A | Drain Current (continuous) at Tc=25 |
| IDM | 640 | A | Drain Current (pulsed) |
| VGS | +/-30 | V | Gate to Source Voltage |
| Ptot | 200 | W | Total Dissipation at Tc=25 |
| Tj Max. | 175 | Operating Junction Temperature | |
| EAS | 700 | mJ | Single Pulse Avalanche Energy |
| Electrical Characteristics | |||
| VDS | 40 | V | VGS=0V, ID=250A |
| RDS(on) | 2.5 - 3.5 | m | VGS =10V, ID=50A |
| VGS(th) | 2.0 - 3.2 | V | VDS=VGS, ID=250 A |
| IDSS | 1.0 | A | VDS=40V, VGS = 0V |
| IGSS(F) | 100 | nA | VGS= +20V |
| IGSS(R) | -100 | nA | VGS= -20V |
| Ciss | 3315 | pF | VGS =0V, VDS=25V, f=1.0MHZ |
| Coss | 230 | pF | VGS =0V, VDS=25V, f=1.0MHZ |
| Crss | 18 | pF | VGS =0V, VDS=25V, f=1.0MHZ |
| Switching Characteristics | |||
| td(on) | 34 | nS | VDD=20V,ID=50A, RG=10 |
| tr | 26 | nS | VDD=20V,ID=50A, RG=10 |
| td(off) | 72 | nS | VDD=20V,ID=50A, RG=10 |
| tf | 39 | nS | VDD=20V,ID=50A, RG=10 |
| Qg | 47 | nC | VDS=20 V ID=50A VGS=10V |
| Qgs | 11.2 | nC | VDS=20 V ID=50A VGS=10V |
| Qgd | 19 | nC | VDS=20 V ID=50A VGS=10V |
| Source-Drain Diode Characteristics | |||
| ISD | 180 | A | S-D Current(Body Diode) |
| ISDM | 640 | A | Pulsed S-D Current(Body Diode) |
| VSD | 1.5 | V | VGS=0V, IDS=100A |
| trr | 555 | nS | TJ=25,IF=100A di/dt=100A/us |
| Qrr | 4550 | C | TJ=25,IF=100A di/dt=100A/us |
| Thermal Characteristics | |||
| RJC | 2.5 | /W | Junction-to-Case |
2410171638_Minos-IRF1404_C41433062.pdf
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