N Channel MOSFET MIRACLE POWER MSA002B with Low Gate Charge and High Continuous Drain Current Rating
Key Attributes
Model Number:
MSA002B
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
220A
RDS(on):
2.8mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
31pF
Output Capacitance(Coss):
1.498nF
Input Capacitance(Ciss):
10.38nF
Pd - Power Dissipation:
312.5W
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
MSA002B
Package:
TO-263
Product Description
Product Overview
The MSA002B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This MOSFET offers a 110V drain-source voltage and a continuous drain current of 220A at 25C. It features excellent RDS(on) and low gate charge, with a typical RDS(on) of 2.2m at VGS = 10V. The device is 100% EAS guaranteed and is Halogen-free and RoHS-compliant. It is suitable for applications such as Load Switches, PWM applications, and Power Management.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Halogen-free; RoHS-compliant
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(on) | 110V, 220A | 2.2m @ VGS = 10V | ||||
| Gate Charge | Low | |||||
| EAS | Single Pulsed Avalanche Energy | 1296 | mJ | |||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 110 | V | ||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | TC = 25C | 220 | A | ||
| ID | Drain Current-Continuous | TC = 100C | 156 | A | ||
| IDM | Drain Current-Pulsed | 880 | A | |||
| PD | Maximum Power Dissipation | TC = 25C | 312.5 | W | ||
| EAS | Single Pulsed Avalanche Energy | c | 1296 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.4 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 33 | C/W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 110 | - | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 110V, VGS = 0V | 1.0 | A | ||
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | 2.2 | 2.8 | m | |
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | 2.8 | - | ||
| Ciss | Input Capacitance | VDS = 55V, VGS = 0V, f = 1.0MHz | 10.38 | - | nF | |
| Coss | Output Capacitance | 1498 | - | pF | ||
| Crss | Reverse Transfer Capacitance | 31 | - | pF | ||
| td(on) | Turn-On Delay Time | VDD = 55V, VGS = 10V, ID = 20A, RGEN = 3.0 | 44 | - | ns | |
| tr | Turn-On Rise Time | 66 | - | ns | ||
| td(off) | Turn-Off Delay Time | 128 | - | ns | ||
| tf | Turn-Off Fall Time | 76 | - | ns | ||
| Qg | Total Gate Charge | VDS = 55V, VGS = 0 to 10V, ID = 20A | 152 | - | nC | |
| Qgs | Gate-Source Charge | 49 | - | nC | ||
| Qgd | Gate-Drain Charge | 34 | - | nC | ||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | 220 | A | |
| ISM | Maximum Pulsed Current | - | 880 | A | ||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 20A | - | 1.2 | V | |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 100 | ns | |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 325 | nC | |
2504151445_MIRACLE-POWER-MSA002B_C47361209.pdf
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