Power MOSFET Minos MPT110N8F6 N Channel Enhanced with Low Conduction Losses and Fast Switching Speed
Key Attributes
Model Number:
MPT110N8F6
Product Custom Attributes
Drain To Source Voltage:
85V
Configuration:
-
Current - Continuous Drain(Id):
118A
RDS(on):
6.5mΩ@10V,50A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
13.5pF@40V
Number:
1 N-channel
Pd - Power Dissipation:
156.2W
Input Capacitance(Ciss):
3.217nF@40V
Gate Charge(Qg):
64nC@10V
Mfr. Part #:
MPT110N8F6
Package:
TO-220
Product Description
Product Overview
The MPT110N8F6 is an N-Channel Enhanced Power MOSFET utilizing advanced double trench technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal component for motor drivers and high-speed switching applications, offering low on-resistance, fast switching, low gate charge, and high avalanche ruggedness.
Product Attributes
- Brand: Shenzhen Minos (MNS-KX)
- Certifications: RoHS
Technical Specifications
| Parameter | Value | Units | Conditions |
| General Features | |||
| VDS | 85 | V | |
| RDS(on) | <6.5 | m | VGS=10V, ID=118A (Typ:5.4m) |
| Absolute Ratings | |||
| VDSS | 85 | V | |
| ID (Silicon Limited) | 118 | A | TC=25C |
| ID (Package Limited) | 80 | A | TC=25C |
| ID @TC=100C (Silicon Limited) | 75 | A | |
| IDM (Pulsed Drain Current) | 320 | A | Note1 |
| VGS | 20 | V | |
| EAS (Avalanche Energy) | 100 | mJ | Note2 |
| PD (Power Dissipation) | 156.2 | W | |
| TJ, Tstg (Operating & Storage Temp.) | -55 to 150 | ||
| TL (Max Temp. for Soldering) | 260 | ||
| Thermal Characteristics | |||
| RJC (Junction-Case) | 0.55 | /W | |
| RJA (Junction-Ambient) | 62.5 | /W | |
| OFF Characteristics | |||
| VDSS (Breakdown Voltage) | 85 | V | VGS=0V, ID=250A |
| IDSS (Leakage Current) | 1 | A | VDS=100V, VGS=0V |
| IDSS @TC=125C | 100 | A | VDS=80V, VGS=0V |
| IGSS(F) (Gate-Source Forward Leakage) | 100 | nA | VGS=+20V |
| IGSS(R) (Gate-Source Reverse Leakage) | -100 | nA | VGS=-20V |
| ON Characteristics | |||
| RDS(on) | 5.4 | m | VGS=10V, ID=50A (Typ) |
| RDS(on) | 6.5 | m | VGS=10V, ID=50A (Max) |
| VGS(th) (Gate Threshold Voltage) | 2.0 to 4.0 | V | VDS=VGS, ID=250A |
| Dynamic Characteristics | |||
| Ciss (Input Capacitance) | 3217 | pF | VDS=40V, VGS=0, f=1MHz (Typ) |
| Coss (Output Capacitance) | 510 | pF | VDS=40V, VGS=0, f=1MHz (Typ) |
| Crss (Reverse Transfer Capacitance) | 13.5 | pF | VDS=40V, VGS=0, f=1MHz (Typ) |
| Qg (Total Gate Charge) | 64 | nC | VDD=40V,ID=50A, VGS=10V (Typ) |
| Qgs (Gate-Source Charge) | 18.4 | nC | VDD=40V,ID=50A, VGS=10V (Typ) |
| Qgd (Gate-Drain Charge) | 19 | nC | VDD=40V,ID=50A, VGS=10V (Typ) |
| Switching Characteristics | |||
| td(on) (Turn-On Delay Time) | 17 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load (Typ) |
| tr (Rise Time) | 30 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load (Typ) |
| td(off) (Turn-Off Delay Time) | 37 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load (Typ) |
| tf (Fall Time) | 20 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load (Typ) |
| Source-Drain Diode Characteristics | |||
| IS (Continuous Source Current) | 118 | A | |
| ISM (Maximum Pulsed Current) | 320 | A | |
| VSD (Diode Forward Voltage) | 1.2 | V | IS=50A (Max) |
| Trr (Reverse Recovery Time) | 57 | ns | Is=20A, di/dt=100A/us (Typ) |
| Qrr (Reverse Recovery Charge) | 65 | uC | Is=20A, di/dt=100A/us (Typ) |
2412021740_Minos-MPT110N8F6_C42401742.pdf
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