Power MOSFET Minos MDT19N10L Featuring Low Gate Charge and High Avalanche Current for Switching Devices
Key Attributes
Model Number:
MDT19N10L
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
19A
RDS(on):
115mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
680pF@25V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
MDT19N10L
Package:
TO-252
Product Description
Product Overview
The MDT19N10L is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design, characterized avalanche voltage and current, and excellent package for heat dissipation contribute to its stability and uniformity.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Origin: Shenzhen, China (derived from contact information)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 19 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 50 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 31 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 21 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RθJC | 4.8 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 1 | 1.8 | 2.4 | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=5A | 80 | 90 | mΩ | |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=4.5V, ID=5A | 90 | 115 | mΩ | |
| Forward Transconductance | gFS | VDS=25V,ID=3.6A | 5 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | 680 | pF | ||
| Output Capacitance | Coss | 110 | pF | |||
| Reverse Transfer Capacitance | Crss | 85 | pF | |||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=5A, VGS=10V,RGEN=2.5Ω | 10 | nS | ||
| Turn-on Rise Time | tr | 7 | nS | |||
| Turn-Off Delay Time | td(off) | 34 | nS | |||
| Turn-Off Fall Time | tf | 9 | nS | |||
| Total Gate Charge | Qg | VDS=80V,ID=3A, VGS=10V | 16 | nC | ||
| Gate-Source Charge | Qgs | 4 | nC | |||
| Gate-Drain Charge | Qg d | 5 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=19A | 1.2 | V | ||
2412021740_Minos-MDT19N10L_C42401743.pdf
Related Products
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
