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quality Power MOSFET Device MIRACLE POWER MJQ80N65F N Channel Designed for Boost PFC and Phase Shift Bridge Circuits factory
quality Power MOSFET Device MIRACLE POWER MJQ80N65F N Channel Designed for Boost PFC and Phase Shift Bridge Circuits factory

Power MOSFET Device MIRACLE POWER MJQ80N65F N Channel Designed for Boost PFC and Phase Shift Bridge Circuits

Key Attributes
Model Number: MJQ80N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
80A
RDS(on):
38mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12.1pF
Number:
1 N-channel
Output Capacitance(Coss):
169pF
Input Capacitance(Ciss):
6.033nF
Pd - Power Dissipation:
500W
Gate Charge(Qg):
158.2nC@10V
Mfr. Part #:
MJQ80N65F
Package:
TO-247
Product Description

Product Overview

The MJQ80N65F is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It is designed for high-efficiency applications, including soft switching boost PFC, HB or AHB or LLC half bridge and full bridge topologies, phase-shift-bridge (ZVS), and LLC applications. This MOSFET is suitable for server power, telecom power, EV charging, and solar inverters, offering robust performance with 100% avalanche testing.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Advanced Super Junction Technology
  • Channel Type: N-Channel
  • Testing: 100% Avalanche Tested

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous, TC =25C 80 A
IDM Drain Current-Pulsed 240 A
PD Maximum Power Dissipation @ TJ =25C 500 W
dv/dt Peak Diode Recovery dv/dt 50 V/ns
EAS Single Pulsed Avalanche Energy 2880 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.25 C/W
RJA Thermal Resistance, Junction to Ambient 62 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 650 - - V
IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V - - 5 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 3.0 - 5.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 28A - 34 38 m
Dynamic Characteristics
RG Gate Resistance f = 1.0MHz - 1.2 -
Ciss Input Capacitance VDS = 400V, VGS = 0V, f = 10kHz - 6033 - pF
Coss Output Capacitance - 169 - pF
Crss Reverse Transfer Capacitance - 12.1 - pF
On Characteristics (Continued)
td(on) Turn-On Delay Time VDD = 400V, VGS = 13V, ID = 44.2A, RG = 1.8 - 67.6 - ns
tr Turn-On Rise Time - 29.8 - ns
td(off) Turn-Off Delay Time - 30 - ns
tf Turn-Off Fall Time - 325.4 - ns
Qg Total Gate Charge VDD = 480V, VGS = 10V, ID = 44.2A - 158.2 - nC
Qgs Gate-Source Charge - 45 - nC
Qgd Gate-Drain Charge - 61 - nC
Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage VGS = 0V, IF = 1A - 0.61 - V
Trr Body Diode Reverse Recovery Time VR = 400V, IF = 44.2A, dIF/dt = 100A/s - 173.5 - ns
Qrr Body Diode Reverse Recovery Charge VR = 400V, IF = 44.2A, di/dt = 100A/s - 1.19 - C
Irrm Peak reverse recovery current VR = 400V, IF = 44.2A, di/dt = 100A/s - 12.7 - A

Notes:
a. TJ = +25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width 300s; duty cycle 2%
d. L = 10mH, VDD = 100V, IAS = 24A, RG = 25 Starting TJ = 25 .


2411220026_MIRACLE-POWER-MJQ80N65F_C34373733.pdf

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