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quality High Current N Channel Enhancement MOSFET MIRACLE POWER MU3012D with 30V Drain Source Voltage Rating factory
quality High Current N Channel Enhancement MOSFET MIRACLE POWER MU3012D with 30V Drain Source Voltage Rating factory

High Current N Channel Enhancement MOSFET MIRACLE POWER MU3012D with 30V Drain Source Voltage Rating

Key Attributes
Model Number: MU3012D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
302pF
Number:
1 N-channel
Output Capacitance(Coss):
372pF
Pd - Power Dissipation:
78W
Input Capacitance(Ciss):
3.089nF
Gate Charge(Qg):
58nC@10V
Mfr. Part #:
MU3012D
Package:
TO-252
Product Description

Product Overview

The MU3012D is an N-Channel Enhancement Mode MOSFET featuring Miracle Technology. It offers a 30V drain-source voltage and 100A continuous drain current, with a typical RDS(ON) of 2.9m at VGS = 10V. This MOSFET utilizes advanced trench technology for excellent RDS(ON) and low gate charge, making it suitable for load switch, PWM applications, and power management scenarios.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Advanced Trench Technology
  • Mode: N-Channel Enhancement Mode
  • Lead Free: Yes

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous (TC =25C) 100 A
ID Drain Current-Continuous (TC =100C) 63 A
IDM Drain Current-Pulsed 400 A
PD Maximum Power Dissipation (@ TJ =25C) 78 W
EAS Single Pulsed Avalanche Energy 175 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 1.6 C/W
RJA Thermal Resistance, Junction to Ambient 32 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 30 - - V
IDSS Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.3 1.9 2.5 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 30A - 2.9 3.6 m
RDS(on) Static Drain-Source On- Resistance VGS = 4.5V, ID = 20A - 4.7 6.1 m
Dynamic Characteristics
Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 3089 - pF
Coss Output Capacitance - 372 - pF
Crss Reverse Transfer Capacitance - 302 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 15V, VGS = 10V, ID = 30A, RGEN = 3 - 11 - ns
tr Turn-On Rise Time - 29 - ns
td(off) Turn-Off Delay Time - 47 - ns
tf Turn-Off Fall Time - 18 - ns
Qg Total Gate Charge VDS = 15V, VGS = 0 to 10V, ID = 30A - 58 - nC
Qgs Gate-Source Charge - 12 - nC
Qgd Gate-Drain Charge - 13 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 100 A
ISM Maximum Pulsed Current VGS = 0V - - 400 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 30A, di/dt = 100A/s - 16 - ns
Qrr Body Diode Reverse Recovery Charge IF = 30A, di/dt = 100A/s - 7 - nC

2408011701_MIRACLE-POWER-MU3012D_C34373750.pdf

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