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quality Durable P Channel MOSFET MIRACLE POWER MU3004X Suitable for DC DC Converters and Synchronous Circuits factory
quality Durable P Channel MOSFET MIRACLE POWER MU3004X Suitable for DC DC Converters and Synchronous Circuits factory

Durable P Channel MOSFET MIRACLE POWER MU3004X Suitable for DC DC Converters and Synchronous Circuits

Key Attributes
Model Number: MU3004X
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
51.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Pd - Power Dissipation:
41.7W
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
-
Gate Charge(Qg):
65nC@4.5V
Mfr. Part #:
MU3004X
Package:
PDFN3.3x3.3
Product Description

Product Overview

The MU3004X is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Engineered for high-frequency switching and synchronous applications, this MOSFET offers reliable and rugged performance with a fast switching speed. It is suitable for DC/DC converters and other demanding applications. The device is available as a Green Device and is 100% EAS Guaranteed.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: P-Channel Enhancement Mode MOSFET
  • Series: MU3004X
  • Availability: Green Device Available
  • Guarantee: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted -30 V
VGS Gate-Source Voltage Tc = 25C unless otherwise noted 20 V
ID Drain Current-Continuous, Tc =25C Tc = 25C unless otherwise noted -51.8 A
ID Drain Current-Continuous, Tc =100C Tc = 25C unless otherwise noted -41.4 A
IDM Drain Current-Pulsed a Tc = 25C unless otherwise noted -70 A
EAS Avalanche Energy, Single pulse b Tc = 25C unless otherwise noted 39.2 mJ
IAS Avalanche Current Tc = 25C unless otherwise noted -28 A
PD Maximum Power Dissipation @ Tc =25C Tc = 25C unless otherwise noted 41.7 W
TSTG Store Temperature Range Tc = 25C unless otherwise noted -55 150 C
TJ Operating Junction Temperature Range Tc = 25C unless otherwise noted -55 150 C
Thermal Characteristics
RJC Thermal Resistance Junction-Case 3 C/W
RJA Thermal Resistance Junction-Ambient c 80 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250A -30 - V
IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V - - -1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =-250A -1 1.5 -2 V
RDS(on) Static Drain-Source On- Resistance d VGS = -10V, ID =- 13A - 8.6 10.5 m
RDS(on) Static Drain-Source On- Resistance d VGS = -4.5V, ID = -9A - 11.5 15 m
gfs Forward Transconductance VDS=-5V, ID= -13A - 25 - S
Dynamic Characteristics
Ciss Input Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz - 2828 - pF
Coss Output Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz - 343 - pF
Crss Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz - 291 - pF
On Characteristics
td(on) Turn-On Delay Time VDS = -15V, ID=-1A, RG = 6,VGS=-10V - 11.4 - ns
tr Turn-On Rise Time VDS = -15V, ID=-1A, RG = 6,VGS=-10V - 24 - ns
td(off) Turn-Off Delay Time VDS = -15V, ID=-1A, RG = 6,VGS=-10V - 104 - ns
tf Turn-Off Fall Time VDS = -15V, ID=-1A, RG = 6,VGS=-10V - 56.8 - ns
Qg Total Gate Charge VDS = -25V, ID = -13A, VGS = -4.5V - 33 - nC
Qg Total Gate Charge VDS = -25V, ID = -13A, VGS = -10V - 65 - nC
Qgs Gate-Source Charge VDS = -25V, ID = -13A, VGS = -10V - 8.7 - -
Qgd Gate-Drain Charge VDS = -25V, ID = -13A, VGS = -10V - 15 - -
Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage d VGS = 0V, ISD = -3A - -0.75 -1.1 V
trr Reverse Recovery Time IF= -20A, di/dt=100A/us, TJ=25C - 15.6 - ns
Qrr Reverse Recovery Charge IF= -20A, di/dt=100A/us, TJ=25C - 7.9 - nC

Notes:
a: Max. current is limited by junction temperature.
b: The EAS data shows Max. Rating. The test condition is VDD=50V,VGS=10V,L=0.1mH,IAS=23A.
c: Surface Mounted on 1in2 FR-4 board with 1oz.
d: Pulse test (pulse width300us, duty cycle2%).
e: Guaranteed by design, not subject to production testing.


2410122015_MIRACLE-POWER-MU3004X_C17702007.pdf

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