Power MOSFET MIRACLE POWER MPW04NA2 Featuring Low On Resistance and Fast Switching for Applications
Key Attributes
Model Number:
MPW04NA2
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
98pF
Number:
1 N-channel
Pd - Power Dissipation:
48W
Output Capacitance(Coss):
150pF
Input Capacitance(Ciss):
833pF
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
MPW04NA2
Package:
TO-3PH
Product Description
Product Overview
The MPW04NA2 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency applications. It features a 1200V breakdown voltage, 4A continuous drain current, and a low on-resistance of 2.9 (typ.) at VGS = 10V. Key advantages include low on-resistance, fast switching, low gate charge, and 100% single pulse avalanche energy testing. This MOSFET is suitable for applications such as UPS, high-efficiency switch mode power supplies, and electronic lamp ballasts based on half-bridge configurations.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Model: MPW04NA2
- Technology: Miracle Technology
Technical Specifications
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | |||
|---|---|---|---|
| Symbol | Parameter | Limit | Unit |
| VDS | Drain-Source Voltage | 1200 | V |
| VGS | Gate-Source Voltage | 30 | V |
| ID | Drain Current-Continuous, TC =25C | 4 | A |
| ID | Drain Current-Continuous, TC =100C | 2.4 | A |
| IDM | Drain Current-Pulsed | 16 | A |
| PD | Maximum Power Dissipation @ TJ =25C | 48 | W |
| EAS | Single Pulsed Avalanche Energy | 80 | mJ |
| TJ, TSTG | Operating and Store Temperature Range | -55 to 150 | C |
| Thermal Characteristics | |||
|---|---|---|---|
| Symbol | Parameter | Max. | Unit |
| RJC | Thermal Resistance, Junction-Case | 2.6 | C/W |
| RJA | Thermal Resistance Junction-Ambient | 40 | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||
|---|---|---|---|---|
| Symbol | Parameter | Test Condition | Typ. | Unit |
| Off Characteristics | ||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 1200 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200V, VGS = 0V | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | 100 | nA |
| On Characteristics | ||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 3 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID =2A | 2.9 | |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | 833 | pF |
| Coss | Output Capacitance | 150 | pF | |
| Crss | Reverse Transfer Capacitance | 98 | pF | |
| Switching Characteristics | ||||
| td(on) | Turn-On Delay Time | VDD = 600V, ID =4A, RG = 25,VGS = 10V | 29 | ns |
| tr | Turn-On Rise Time | 55 | ns | |
| td(off) | Turn-Off Delay Time | 94 | ns | |
| tf | Turn-Off Fall Time | 88 | ns | |
| Qg | Total Gate Charge | VDD = 960V, ID =4A, VGS = 10V | 39 | nC |
| Qgs | Gate-Source Charge | 6 | nC | |
| Qgd | Gate-Drain Charge | 25 | nC | |
| Drain-Source Diode Characteristics | ||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | 4 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | 16 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 4 | 1.5 | V |
| trr | Reverse Recovery Time | IS=4A,Tj = 25 dIF/dt=100A/us, VGS=0V | 595 | ns |
| Qrr | Reverse Recovery Charge | 4.9 | uC | |
| Package Information | ||||
|---|---|---|---|---|
| Symbol | Unit | Min | Nom | Max |
| A | mm | 5.35 | 5.55 | 5.75 |
| A1 | mm | 2.80 | 3.00 | 3.20 |
| A2 | mm | 1.90 | 2.10 | 2.30 |
| A3 | mm | 1.00 | 1.20 | 1.40 |
| b | mm | 0.80 | 0.90 | 1.00 |
| b1 | mm | 1.80 | 2.00 | 2.20 |
| b2 | mm | 1.80 | 2.00 | 2.20 |
| c | mm | 0.70 | 0.90 | 1.10 |
| e | mm | 5.25 | 5.45 | 5.65 |
| E | mm | 15.2 | 15.4 | 15.6 |
| E1 | mm | 9.80 | 10.0 | 10.2 |
| E2 | mm | 3.80 | 4.00 | 4.20 |
| G | mm | 4.3 | 4.5 | 4.7 |
| H | mm | 24.3 | 24.5 | 24.7 |
| H1 | mm | 9.80 | 10.0 | 10.2 |
| H2 | mm | 14.3 | 14.5 | 14.7 |
| H3 | mm | 18.5 | 19.0 | 19.5 |
| H4 | mm | 2.00 | 2.20 | 2.40 |
| H5 | mm | 24.0 | 24.5 | 25.0 |
| P | mm | 3.30 | 3.50 | 3.70 |
2410122012_MIRACLE-POWER-MPW04NA2_C17702000.pdf
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