Miracle Power MPU04N65 N Channel Power MOSFET designed for operation in high voltage power applications
Key Attributes
Model Number:
MPU04N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.7Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
77W
Gate Charge(Qg):
14.2nC@10V
Mfr. Part #:
MPU04N65
Package:
TO-251
Product Description
MPU04N65 N-Channel Power MOSFET
The MPU04N65 is a 650V, 4A N-Channel Power MOSFET from Miracle Technology Co., Ltd. Engineered for efficiency and reliability, it features low Crss, fast switching speeds, and is 100% avalanche tested. This MOSFET is ideally suited for applications such as chargers and standby power supplies, offering robust performance in demanding environments.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Model: MPU04N65
- Package: TO-251
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | VGS = 10V | 650V, 4A, 2.3 | ||||
| Low Crss | ||||||
| Fast Switching | ||||||
| 100% Avalanche Tested | ||||||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 650 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 4 | A | |||
| ID | Drain Current-Continuous, TC =100C | 2.5 | A | |||
| IDM | Drain Current-Pulsed | b | 16 | A | ||
| PD | Maximum Power Dissipation | TJ = 25C | 77 | W | ||
| dv/dt | Peak Diode Recovery dv/dt | c | 5.0 | V/ns | ||
| EAS | Single Pulsed Avalanche Energy | d | 180 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | 1.62 | C/W | |||
| RJA | Thermal Resistance Junction-Ambient | 110 | C/W | |||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | 1 | A | ||
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | 100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2 | 4 | V | |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 2A | 2.3 | 2.7 | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | 610 | pF | ||
| Coss | Output Capacitance | 53 | pF | |||
| Crss | Reverse Transfer Capacitance | 3.5 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325V, ID = 4A, RG = 25,VGS=10V | 12.7 | ns | ||
| tr | Turn-On Rise Time | 17.4 | ns | |||
| td(off) | Turn-Off Delay Time | 30.9 | ns | |||
| tf | Turn-Off Fall Time | 10.5 | ns | |||
| Qg | Total Gate Charge | VDS = 520V, ID = 4A, VGS = 10V | 14.2 | nC | ||
| Qgs | Gate-Source Charge | 5.5 | nC | |||
| Qgd | Gate-Drain Charge | 3.8 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | 4 | A | ||
| ISM | Maximum Pulsed Current | VGS = 0V | 16 | A | ||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 4A | 1.4 | V | ||
| Trr | Body Diode Reverse Recovery Time | di/dt=100A/us, IF=4A, VGS=0V | 264 | ns | ||
| Qrr | Reverse Recovery Charge | 1200 | nC | |||
Notes
- a. TJ=+25 to +150
- b. Repetitive rating; pulse width limited by maximum junction temperature.
- c. ISD =4A, di/dt 100A/us, VDDBVDS, Start TJ=25
- d. L = 10mH, VDD=50V, ID = 6A, RG=25 Starting TJ=25
2410122015_MIRACLE-POWER-MPU04N65_C17701972.pdf
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